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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

  • US 20170162668A1
  • Filed: 11/10/2016
  • Published: 06/08/2017
  • Est. Priority Date: 12/07/2015
  • Status: Abandoned Application
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • forming a fin extending in a first direction;

    forming a dummy layer including a plurality of semiconductor layers disposed on the fin, wherein each of the plurality of semiconductor layers has different impurity concentrations from each other; and

    etching the dummy layer to form a dummy gate electrode.

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