SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A manufacturing method of a semiconductor device comprising steps of:
- forming a gate electrode layer over a substrate,forming a gate insulating layer over the gate electrode layer;
introducing the substrate into a first treatment chamber in a reduced pressure state, after formation of the gate electrode layer and the gate insulating layer;
forming, over the gate insulating layer, an oxide semiconductor layer by introducing into the first treatment chamber a sputtering gas, and using a target of a metal oxide placed inside the first treatment chamber while removing residual moisture from the first treatment chamber;
forming, over the oxide semiconductor layer, a silicon oxide layer including defects by introducing the substrate into a second treatment chamber, introducing into the second treatment chamber a sputtering gas containing oxygen, and using a target including silicon placed inside the second treatment chamber, while removing residual moisture from the second treatment chamber;
forming, over the silicon oxide layer, a silicon nitride layer by introducing the substrate into a third treatment chamber in a reduced pressure state, removing residual moisture from the third treatment chamber, introducing in the third treatment chamber a sputtering gas containing nitrogen, and using a target including silicon placed inside the third treatment chamber; and
heating the substrate so as to diffuse towards, and trap into, the silicon oxide layer at least part of hydrogen or moisture included in the oxide semiconductor layer.
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Accused Products
Abstract
An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. The impurity concentration in the oxide semiconductor layer is reduced in the following manner: a silicon oxide layer including many defects typified by dangling bonds is formed in contact with the oxide semiconductor layer, and an impurity such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O) included in the oxide semiconductor layer is diffused into the silicon oxide layer. Further, a mixed region is provided between the oxide semiconductor layer and the silicon oxide layer. The mixed region includes oxygen, silicon, and at least one kind of metal element that is included in the oxide semiconductor.
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Citations
21 Claims
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1. A manufacturing method of a semiconductor device comprising steps of:
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forming a gate electrode layer over a substrate, forming a gate insulating layer over the gate electrode layer; introducing the substrate into a first treatment chamber in a reduced pressure state, after formation of the gate electrode layer and the gate insulating layer; forming, over the gate insulating layer, an oxide semiconductor layer by introducing into the first treatment chamber a sputtering gas, and using a target of a metal oxide placed inside the first treatment chamber while removing residual moisture from the first treatment chamber; forming, over the oxide semiconductor layer, a silicon oxide layer including defects by introducing the substrate into a second treatment chamber, introducing into the second treatment chamber a sputtering gas containing oxygen, and using a target including silicon placed inside the second treatment chamber, while removing residual moisture from the second treatment chamber; forming, over the silicon oxide layer, a silicon nitride layer by introducing the substrate into a third treatment chamber in a reduced pressure state, removing residual moisture from the third treatment chamber, introducing in the third treatment chamber a sputtering gas containing nitrogen, and using a target including silicon placed inside the third treatment chamber; and heating the substrate so as to diffuse towards, and trap into, the silicon oxide layer at least part of hydrogen or moisture included in the oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 18, 19)
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10. A manufacturing method of a semiconductor device comprising steps of:
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forming a gate electrode layer over a substrate, forming a gate insulating layer over the gate electrode layer; introducing the substrate into a first treatment chamber in a reduced pressure state, after formation of the gate electrode layer and the gate insulating layer; forming, over the gate insulating layer, an oxide semiconductor layer by introducing into the first treatment chamber a sputtering gas, and using a target of a metal oxide placed inside the first treatment chamber while removing residual moisture from the first treatment chamber; forming, over the oxide semiconductor layer, a silicon oxide layer including defects by introducing the substrate into a second treatment chamber, introducing into the second treatment chamber a sputtering gas containing oxygen, and using a target including silicon placed inside the second treatment chamber, while removing residual moisture from the second treatment chamber; forming, over the silicon oxide layer, a silicon nitride layer by switching from the sputtering gas containing oxygen to a sputtering gas containing nitrogen, and using the target including silicon which is placed inside the second treatment chamber; and heating the substrate so as to diffuse towards, and trap into, the silicon oxide layer at least part of hydrogen or moisture included in the oxide semiconductor layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 20, 21)
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Specification