OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING SAME
1 Assignment
0 Petitions
Accused Products
Abstract
An optoelectronic semiconductor chip which is a light emitting diode includes a semiconductor layer sequence having an n-conducting layer sequence, a p-conducting layer sequence, an active zone, at least one etching signal layer, and an etching structure, wherein the etching structure extends at least right into the etching signal layer, the etching signal layer has a signal constituent, the active zone generates radiation and is based on InAlGaP or on InAlGaAs, the etching signal layer is situated in the p-conducting layer sequence and is based on In1−x−yAlyGaxP or on In1−x−yAlyGaxAs where x+y<1, the signal constituent is Ga and 0.005≦x≦0.2, the signal constituent is not present in the layer adjoining the etching signal layer in a direction toward the etching structure, a thickness of the etching signal layer is 50 nm to 800 nm.
-
Citations
29 Claims
-
1-14. -14. (canceled)
-
15. An optoelectronic semiconductor chip which is a light emitting diode comprising a semiconductor layer sequence, wherein the semiconductor layer sequence has:
-
an n-conducting layer sequence, a p-conducting layer sequence, an active zone situated between the n-conducting layer sequence and the p-conducting layer sequence, at least one etching signal layer in the p-conducting layer sequence and/or in the n-conducting layer sequence, and an etching structure at a side of the etching signal layer facing away from the active zone, wherein the etching structure extends at least right into the etching signal layer, the etching signal layer has a signal constituent, the active zone generates radiation and is based on InAlGaP or on InAlGaAs, the etching signal layer is situated in the p-conducting layer sequence and is based on In1−
x−
yAlyGaxP or on In1−
x−
yAlyGaxAs where x+y<
1,the signal constituent is Ga and 0.005≦
x≦
0.2,the signal constituent is not present in the layer adjoining the etching signal layer in a direction toward the etching structure, a thickness of the etching signal layer is 50 nm to 800 nm, and as a result of the etching structure a material of the etching signal layer is partly removed. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
-
-
29. An optoelectronic semiconductor chip comprising a semiconductor layer sequence, wherein the semiconductor layer sequence has:
-
an n-conducting layer sequence, a p-conducting layer sequence, an active zone situated between the n-conducting layer sequence and the p-conducting layer sequence, at least one etching signal layer in the p-conducting layer sequence and/or in the n-conducting layer sequence, an etching structure at a side of the etching signal layer facing away from the active zone, the etching structure extends at least right into the etching signal layer, and the etching signal layer has a signal constituent reduced by at least a factor of two in a layer adjoining the etching signal layer in a direction toward the etching structure. - View Dependent Claims (16)
-
Specification