Metallizing MEMS Devices
First Claim
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1. A method of fabricating a micromachined device having a metal interconnection structure, comprising:
- fabricating a substrate having at least one semiconductor interconnection structure, the semiconductor interconnection structure having an electrical resistance;
fabricating a micromachined structure on the substrate; and
after fabricating the micromachined structure, metallizing the semiconductor interconnection structure to form a conductive metal interconnection structure having an electrical resistance that is lower than the electrical resistance of the semiconductor interconnection structure.
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Abstract
Various embodiments produce a semiconductor device, such a MEMS device, having metallized structures formed by replacing a semiconductor structure with a metal structure. Some embodiments expose a semiconductor structure to one or more a reacting gasses, such as gasses including tungsten or molybdenum.
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Citations
40 Claims
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1. A method of fabricating a micromachined device having a metal interconnection structure, comprising:
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fabricating a substrate having at least one semiconductor interconnection structure, the semiconductor interconnection structure having an electrical resistance; fabricating a micromachined structure on the substrate; and after fabricating the micromachined structure, metallizing the semiconductor interconnection structure to form a conductive metal interconnection structure having an electrical resistance that is lower than the electrical resistance of the semiconductor interconnection structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 21, 22, 23)
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13. A MEMS device comprising:
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a substrate having a surface; a movable MEMS structure movably suspended from the substrate; a metallized interconnection structure, the metallized interconnection structure comprising a metal-infused semiconductor and having a sheet resistance of less than 5 Ω
/sq. - View Dependent Claims (14, 24, 25, 26)
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15. A method of fabricating a micromachined device, comprising:
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fabricating a micromachined structure on a substrate; fabricating at least one semiconductor interconnection structure at a surface of the substrate; and simultaneously metallizing the micromachined structure and the at least one semiconductor interconnection structure to form a metallized micromachined structure and at least one conductive metal interconnection structure. - View Dependent Claims (16, 17, 19, 20, 27, 28, 29, 30, 31, 32, 33)
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18. (canceled)
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34. A method of fabricating a micromachined device, comprising:
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fabricating a micromachined structure on a substrate; and metallizing the micromachined structure, wherein metallizing the micromachined structure comprises forming a seed layer of metal on the micromachined structure in which semiconductor atoms within the micromachined structure are replaced by metal. - View Dependent Claims (35, 36, 37, 38, 39, 40)
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Specification