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MAGNETIC MEMORY

  • US 20170169872A1
  • Filed: 09/16/2016
  • Published: 06/15/2017
  • Est. Priority Date: 12/14/2015
  • Status: Active Grant
First Claim
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1. A magnetic memory comprising:

  • a conductive layer including a first terminal and a second terminal;

    a plurality of magnetoresistive elements separately disposed on the conductive layer between the first terminal and the second terminal, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and

    a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first terminal and second terminal, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first terminal and the second terminal in an opposite direction to the first write current.

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