MAGNETIC MEMORY
First Claim
1. A magnetic memory comprising:
- a conductive layer including a first terminal and a second terminal;
a plurality of magnetoresistive elements separately disposed on the conductive layer between the first terminal and the second terminal, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and
a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first terminal and second terminal, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first terminal and the second terminal in an opposite direction to the first write current.
1 Assignment
0 Petitions
Accused Products
Abstract
A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.
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Citations
32 Claims
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1. A magnetic memory comprising:
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a conductive layer including a first terminal and a second terminal; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first terminal and the second terminal, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first terminal and second terminal, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first terminal and the second terminal in an opposite direction to the first write current. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A magnetic memory comprising:
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a conductive layer including a first terminal and a second terminal; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first terminal and the second terminal, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layer of at least one first magnetoresistive element among the plurality of the magnetoresistive elements and a second potential that is different from the first potential to the reference layer of at least one second magnetoresistive element that is different from the at least one first magnetoresistive element among the plurality of the magnetoresistive elements and to flow a first write current between the first terminal and the second terminal, and configured to apply the second potential to the reference layer of the at least one first magnetoresistive element and the first potential to the reference layer of the at least one second magnetoresistive element and to flow a second write current between the first terminal and the second terminal in an opposite direction to the first write current. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A magnetic memory comprising:
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a first conductive layer including a first terminal and a second terminal; a first magnetoresistive element and a second magnetoresistive element separately disposed on the first conductive layer between the first terminal and the second terminal, each of the first magnetoresistive element and the second magnetoresistive element including a reference layer, a storage layer between the reference layer and the first conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the first magnetoresistive element and the second magnetoresistive element and to flow a first write current between the first terminal and the second terminal, and configured to apply a second potential to the reference layer of at least one of the first magnetoresistive element or the second magnetoresistive element to which data is to be written, and to flow a second write current between the first terminal and the second terminal in an opposite direction to the first write current. - View Dependent Claims (22, 23, 24, 25, 26)
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27. A magnetic memory comprising:
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a first conductive layer including a first terminal and a second terminal; a first magnetoresistive element and a second magnetoresistive element separately disposed on the first conductive layer between the first terminal and the second terminal, each of the first magnetoresistive element and the second magnetoresistive element including a reference layer, a storage layer between the reference layer and the first conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layer of the first magnetoresistive element and a second potential that is different from the first potential to the reference layer of the second magnetoresistive element and to flow a first write current between the first terminal and the second terminal, and configured to apply the second potential to the reference layer of the first magnetoresistive element and the first potential to the reference layer of the second magnetoresistive element and to flow a second write current between the first terminal and the second terminal in an opposite direction to the first write current. - View Dependent Claims (28, 29, 30, 31, 32)
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Specification