IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME

• US 20170170229A1
• Filed: 12/09/2016
• Published: 06/15/2017
• Est. Priority Date: 12/09/2015
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: OH, Young-sun, PARK, Dong-hyuk, KWON, Hee-sang
• Granted Patent: US 10,748,955 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14621 Colour filter arrangements
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements

Abstract

An image sensor and a method of manufacturing the image sensor are provided. The image sensor includes: a substrate comprising a pixel area, a first side, and a second side opposite to the first side, wherein the pixel area includes pixels and light is incident to the second side; a photodiode arranged in each of the pixels of the substrate; a pixel separation structure arranged in the substrate to separate the pixels from each other and including a conductive layer therein; and a voltage-applying wire layer spaced apart from the conductive layer and arranged to surround at least a portion of an outer portion of the pixel area. The conductive layer has a mesh structure that is a single unitary structure, and the voltage-applying wire layer is electrically connected to the conductive layer through at least one contact.

Claims

1. An image sensor comprising:

a substrate comprising a pixel area, a first side, and a second side opposite to the first side, wherein light is incident to the second side and the pixel area comprises a plurality of pixels;

a pixel separation structure arranged in the substrate to separate the pixels from each other and comprising a conductive layer therein; and

a voltage-applying wire layer spaced apart from the conductive layer and arranged on the substrate to surround at least a portion of an outer portion of the pixel area, wherein the voltage-applying wire layer is electrically connected to the conductive layer through at least one contact.

2. The image sensor of claim 1, wherein the pixel area has a rectangular shape when viewed as a horizontal cross section, the voltage-applying wire layer has a rectangular ring shape surrounding the outer portion of the pixel area, and the at least one contact is arranged at each side of the rectangular ring shape.

3. The image sensor of claim 1, wherein the pixel area has a rectangular shape when viewed as a horizontal cross section, the voltage-applying wire layer is provided in four parts each having an L-shape corresponding to a corner portion of the rectangular shape, and the at least one contact is arranged at each of the four parts.

4. The image sensor of claim 1, wherein the pixel area has a rectangular shape when viewed as a horizontal cross section, the voltage-applying wire layer is provided in four parts each having a bar shape corresponding to a side portion of the rectangular shape, and the at least one contact is arranged at each of the four parts.

5. The image sensor of claim 1, further comprising:

an inner wire layer arranged on the first side; and

a dummy area arranged adjacent to the pixel area in the substrate and comprising at least one dummy pixel, wherein at least one of the voltage-applying wire layer and the inner wire layer is electrically connected to the at least one dummy pixel through a dummy contact.

6. The image sensor of claim 5, wherein the dummy area is arranged to surround the pixel area, the dummy contact includes a plurality of dummy contacts, and the dummy contacts are arranged to correspond to a shape of the dummy area and are spaced apart from each other at intervals.

7. The image sensor of claim 5, wherein the pixel area has a rectangular shape when viewed as a horizontal cross section, wherein the dummy area has a rectangular ring shape when viewed as the horizontal cross section and surrounds the pixel area, and wherein the image sensor further comprises:

a dummy wire layer corresponding to the rectangular ring shape, wherein the dummy contact is arranged between the dummy wire layer and the at least one dummy pixel, and wherein the dummy wire layer is connected to at least one of the voltage-applying wire layer and the inner wire layer through a connection wire layer.

8. The image sensor of claim 5, wherein the voltage-applying wire layer comprises a protrusion extending to the dummy area, and wherein the dummy contact is arranged between the protrusion and the at least one dummy pixel.

9. The image sensor of claim 1, wherein the voltage-applying wire layer is arranged on the first side or the second side.

10. The image sensor of claim 9, further comprising an inner wire layer arranged on the first side, wherein at least one of the voltage-applying wire layer and the inner wire layer is electrically connected to a dummy pixel arranged outside the pixel area through a dummy contact.

11. The image sensor of claim 1, wherein the pixel separation structure comprises a deep trench isolation (DTI) layer and the conductive layer arranged in the DTI layer, wherein an insulating layer is arranged on the first side or the second side, and wherein the contact is connected to the conductive layer after penetrating through the insulating layer.

12. The image sensor of claim 1, wherein a negative voltage is applied to the voltage-applying wire layer, and wherein the negative voltage is applied to the entire conductive layer through the contact.

13. An image sensor comprising:

a substrate comprising a pixel area, a dummy area arranged adjacent to the pixel area, a first side, and a second side opposite to the first side, wherein light is incident to the second side, the pixel area comprises a plurality of pixels, and the dummy area comprises at least one dummy pixel;

a pixel separation structure arranged in the substrate to separate the pixels from each other and comprising a conductive layer therein;

a voltage-applying wire layer arranged at an outer portion of the pixel area and electrically connected to the conductive layer; and

an inner wire layer arranged in an insulating layer on the first side, wherein a negative voltage is applied to the conductive layer through the voltage-applying wire layer, and wherein at least one of the voltage-applying wire layer and the inner wire layer is electrically connected to the at least one dummy pixel through a dummy contact.

14. The image sensor of claim 13, wherein the pixel area has a rectangular shape when viewed as a horizontal cross section, and wherein the voltage-applying wire layer is arranged to surround at least a portion of the outer portion of the pixel area.

15. The image sensor of claim 13, wherein the voltage-applying wire layer is spaced apart from the conductive layer by an inter-insulating layer, and wherein the voltage-applying wire layer is electrically connected to the conductive layer through a contact penetrating through the inter-insulating layer.

16. The image sensor of claim 13, wherein the pixel area has a rectangular shape when viewed as a horizontal cross section, wherein the dummy area has a rectangular ring shape and surrounds the pixel area when viewed as the horizontal cross section, wherein the voltage-applying wire layer comprises a protrusion extending to the dummy area, and wherein the dummy contact is arranged between the protrusion and the at least one dummy pixel.

17. The image sensor of claim 13, wherein the pixel separation structure comprises a deep trench isolation (DTI) layer and the conductive layer arranged in the DTI layer, wherein the pixel separation structure further comprises a structure extending from the first side to the second side or a structure extending from the second side to the first side, wherein the conductive layer has a mesh structure that is a single unitary structure, and wherein the voltage-applying wire layer is spaced apart from the conductive layer by an inter-insulating layer arranged on the first side or the second side and is electrically connected to the conductive layer through a contact penetrating through the inter-insulating layer.

18-28. -28. (canceled)

29. A system comprising:

a processor; and

an image sensor coupled to the processor and under operative control thereof, wherein the image sensor includes;

a substrate that includes a pixel area, a first side, and a second side opposite to the first side, wherein light is incident to the second side and the pixel area includes a plurality of pixels;

a photodiode arranged in each of the pixels of the substrate;

a pixel separation structure arranged in the substrate to separate the pixels from each other and including a conductive layer therein, wherein the conductive layer has a mesh structure; and

a voltage-applying wire layer spaced apart from the conductive layer and arranged on the substrate to surround at least a portion of an outer portion of the pixel area, wherein the voltage-applying wire layer is electrically connected to the conductive layer through at least one contact.

30. The system of claim 29, wherein the processor is operable to apply a negative voltage to the voltage-applying wire layer, and wherein the negative voltage is applied to the entire conductive layer through the contact.

31. The system of claim 29, wherein the image sensor further includes:

an inner wire layer arranged on the first side;

a dummy area arranged to surround the pixel area in the substrate and comprising at least one dummy pixel, wherein at least one of the voltage-applying wire layer and the inner wire layer is electrically connected to the at least one dummy pixel through a dummy contact; and

a dummy wire layer, wherein the dummy contact is arranged between the dummy wire layer and the at least one dummy pixel, and wherein the dummy wire layer is connected to at least one of the voltage-applying wire layer and the inner wire layer.

32-39. -39. (canceled)