Method Of Forming A Polysilicon Sidewall Oxide Region In A Memory Cell
First Claim
1. A method of fabricating a memory cell of a semiconductor device, the method comprising:
- depositing a conductive layer having a top surface and a side surface;
forming an ONO layer over the top surface of the conductive layer; and
forming a sidewall oxide layer adjacent the side surface of the conductive layer by a process including;
depositing a thin high temperature oxide (HTO) film on the side surface of the conductive layer; and
performing a rapid thermal oxidation (RTO) anneal.
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Abstract
Methods of fabricating a memory cell of a semiconductor device, e.g., an EEPROM cell, having a sidewall oxide are disclosed. A memory cell structure may be formed including a floating gate and an ONO film over the conductive layer. A sidewall oxide may be formed on a side surface of the floating gate by a process including depositing a thin high temperature oxide (HTO) film on the side surface of the conductive layer, and performing a rapid thermal oxidation (RTO) anneal. The thin HTO film may be deposited before or after performing the RTO anneal. The sidewall oxide formation process may provide an improved memory cell as compared with known prior art techniques, e.g., in terms of endurance and data retention.
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Citations
8 Claims
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1. A method of fabricating a memory cell of a semiconductor device, the method comprising:
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depositing a conductive layer having a top surface and a side surface; forming an ONO layer over the top surface of the conductive layer; and forming a sidewall oxide layer adjacent the side surface of the conductive layer by a process including; depositing a thin high temperature oxide (HTO) film on the side surface of the conductive layer; and performing a rapid thermal oxidation (RTO) anneal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification