STRUCTURES AND FABRICATION METHODS OF FLEXIBLE THERMOELECTRIC DEVICES

• US 20170170381A1
• Filed: 09/30/2016
• Published: 06/15/2017
• Est. Priority Date: 04/14/2014
• Status: Abandoned Application

• Current Assignee: Regents of the University of California (University of California)
• Original Assignee: Regents of the University of California (University of California)
• Inventors: Kobayashi, Nobuhiko, Norris, Kate J.
• Application Number:
  US15/282,997
• Publication Number:
  US 20170170381A1
• Time in Patent Office: Days
• CPC Class Codes: H10N 10/01 Manufacture or treatment
• CPC Class Codes: H10N 10/13 characterised by the heat-exchanging means at the junction
• CPC Class Codes: H10N 10/17 characterised by the structure or configuration of the cell or thermocouple forming the device
• CPC Class Codes: H10N 10/851 comprising inorganic compositions
• CPC Class Codes: H10N 10/855 comprising compounds containing boron, carbon, oxygen or nitrogen
• CPC Class Codes: H10N 10/857 comprising compositions changing continuously or discontinuously inside the material

Abstract

A thermoelectric device is provided that includes a first flexible copper substrate having a carbon layer disposed on a polycrystalline flexible copper foil, a first nanowire structure disposed on the carbon layer, where the first nanowire structure includes a first lateral film layer disposed on the distal ends of the first nanowire structure, where the first lateral film layer connects the first nanowire structure distal ends, a second nanowire structure disposed on the first lateral film layer, where the second nanowire structure includes a second lateral film layer disposed on distal ends of the second nanowire structure, where the second lateral film layer connects the second nanowire structure distal ends, and a second flexible copper substrate disposed on the second lateral film layer.

Claims

1. ) A thermoelectric device, comprising:

a) a first flexible copper substrate, wherein said flexible copper substrate comprises a carbon layer disposed on a polycrystalline flexible copper foil;

b) a first nanowire structure disposed on said carbon layer, wherein said first nanowire structure comprises a first lateral film layer disposed on the distal ends of said first nanowire structure, wherein said first lateral film layer connects said first nanowire structure distal ends;

c) a second nanowire structure disposed on said first lateral film layer, wherein said second nanowire structure comprises a second lateral film layer disposed on distal ends of said second nanowire structure, wherein said second lateral film layer connects said second nanowire structure distal ends; and

d) a second flexible copper substrate disposed on said second lateral film layer.

2. ) The thermoelectric device of claim 1, wherein said polycrystalline copper foil comprises a graphene layer disposed on a flexible copper foil.

3. ) The thermoelectric device of claim 1, wherein said first nanowire structure comprises silicon nanowires.

4. ) The thermoelectric device of claim 3, wherein said silicon nanowires comprise a core-shell structure, where said core structure comprises a crystalline-core structure, wherein said shell structure comprises a polycrystalline-shell structure.

5. ) The thermoelectric device of claim 1, wherein said first lateral film layer comprises a silicon layer.

6. ) The thermoelectric device of claim 1, wherein said second nanowire structure comprises indium phosphide nanowires.

7. ) The thermoelectric device of claim 1, wherein said second lateral film layer comprises a silicon layer.

8. ) The thermoelectric device of claim 1, where the first nanowire structure includes Group III-V, Group IV, or Group V-VI nanowires.

9. ) A thermoelectric device, comprising:

a) a flexible copper substrate, wherein said flexible copper substrate comprises a graphene layer disposed on a polycrystalline copper foil;

b) a nanowire structure disposed on said graphene layer, wherein said nanowire structure comprises a lateral film layer disposed on the distal ends of said nanowire structure, wherein said lateral film layer connects said nanowire structure ends; and

c) a second flexible copper substrate disposed on said lateral film layer.

10. ) The thermoelectric device of claim 9, wherein said nanowire structure comprises silicon nanowires.

11. ) The thermoelectric device of claim 10, wherein said silicon nanowires comprises a core structure surrounded by a shell structure, where said core structure comprises a crystalline-core structure, wherein said shell structure comprises a polycrystalline-shell structure.

12. ) The thermoelectric device of claim 9, wherein said first lateral film layer comprises a silicon layer.

13. ) The thermoelectric device of claim 9, wherein said nanowire structure comprises Group III-V, Group IV, or Group V-VI nanowires.