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SEMICONDUCTOR DEVICE

  • US 20170179150A1
  • Filed: 09/12/2016
  • Published: 06/22/2017
  • Est. Priority Date: 12/16/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate having a major surface;

    a stacked body provided on the major surface of the substrate, the stacked body including a plurality of electrode layers stacked with an insulator interposed, the plurality of electrode layers including a first electrode layer, a second electrode layer, and a third electrode layer, the first electrode layer being most proximal to the major surface of the substrate, the second electrode layer being most distal to the major surface of the substrate, the third electrode layer being provided between the first electrode layer and the second electrode layer;

    a columnar portion provided inside the stacked body, the columnar portion extending along a stacking direction of the stacked body, the columnar portion including a semiconductor body and a memory film, the memory film being provided between the semiconductor body and the electrode layers, the memory film including a charge storage portion inside the film; and

    a plate portion provided inside the stacked body, the plate portion extending along the stacking direction of the stacked body and along a first direction orthogonal to the stacking direction, the plate portion including a plate conductor and a sidewall insulating film, the sidewall insulating film being provided between the plate conductor and the stacked body, the plate portion including a first portion, a second portion, and a third portion along the stacking direction of the stacked body, the third portion being provided between the first portion and the second portion,a width of the first portion along a second direction being narrower than a width of the third portion along the second direction, the second direction being orthogonal to the first direction along the major surface of the substrate,a width of the second portion along the second direction being narrower than the width of the third portion along the second direction.

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