SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device, comprising:
- a substrate having a major surface;
a stacked body provided on the major surface of the substrate, the stacked body including a plurality of electrode layers stacked with an insulator interposed, the plurality of electrode layers including a first electrode layer, a second electrode layer, and a third electrode layer, the first electrode layer being most proximal to the major surface of the substrate, the second electrode layer being most distal to the major surface of the substrate, the third electrode layer being provided between the first electrode layer and the second electrode layer;
a columnar portion provided inside the stacked body, the columnar portion extending along a stacking direction of the stacked body, the columnar portion including a semiconductor body and a memory film, the memory film being provided between the semiconductor body and the electrode layers, the memory film including a charge storage portion inside the film; and
a plate portion provided inside the stacked body, the plate portion extending along the stacking direction of the stacked body and along a first direction orthogonal to the stacking direction, the plate portion including a plate conductor and a sidewall insulating film, the sidewall insulating film being provided between the plate conductor and the stacked body, the plate portion including a first portion, a second portion, and a third portion along the stacking direction of the stacked body, the third portion being provided between the first portion and the second portion,a width of the first portion along a second direction being narrower than a width of the third portion along the second direction, the second direction being orthogonal to the first direction along the major surface of the substrate,a width of the second portion along the second direction being narrower than the width of the third portion along the second direction.
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Accused Products
Abstract
According to one embodiment, a semiconductor device includes a substrate; a stacked body; a columnar portion; and a plate portion. The stacked body includes a plurality of electrode layers stacked with an insulator interposed. The electrode layers include first to third electrode layers. The first electrode layer is most proximal to the substrate. The second electrode layer is most distal to the substrate. The columnar portion and the plate portion are provided inside the stacked body. The plate portion extends along the stacking direction of the stacked body and along a first direction orthogonal to the stacking direction. The plate portion includes first to third portions. The third portion is provided between the first portion and the second portion. Widths of the first portion and the second portion along a second direction are narrower than a width of the third portion along the second direction.
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Citations
18 Claims
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1. A semiconductor device, comprising:
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a substrate having a major surface; a stacked body provided on the major surface of the substrate, the stacked body including a plurality of electrode layers stacked with an insulator interposed, the plurality of electrode layers including a first electrode layer, a second electrode layer, and a third electrode layer, the first electrode layer being most proximal to the major surface of the substrate, the second electrode layer being most distal to the major surface of the substrate, the third electrode layer being provided between the first electrode layer and the second electrode layer; a columnar portion provided inside the stacked body, the columnar portion extending along a stacking direction of the stacked body, the columnar portion including a semiconductor body and a memory film, the memory film being provided between the semiconductor body and the electrode layers, the memory film including a charge storage portion inside the film; and a plate portion provided inside the stacked body, the plate portion extending along the stacking direction of the stacked body and along a first direction orthogonal to the stacking direction, the plate portion including a plate conductor and a sidewall insulating film, the sidewall insulating film being provided between the plate conductor and the stacked body, the plate portion including a first portion, a second portion, and a third portion along the stacking direction of the stacked body, the third portion being provided between the first portion and the second portion, a width of the first portion along a second direction being narrower than a width of the third portion along the second direction, the second direction being orthogonal to the first direction along the major surface of the substrate, a width of the second portion along the second direction being narrower than the width of the third portion along the second direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device, comprising:
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a substrate having a major surface; a stacked body provided on a major surface of the substrate, the stacked body including a plurality of electrode layers stacked with an insulator interposed, the stacked body including a lower layer portion, an upper layer portion, and a middle portion along a stacking direction of the stacked body, the middle portion being provided between the lower layer portion and the upper layer portion; a first plate portion provided inside the stacked body, the first plate portion extending along the stacking direction of the stacked body and along a first direction orthogonal to the stacking direction, the first plate portion including a first plate conductor and a first sidewall insulating film, the first sidewall insulating film being provided between the first plate conductor and the stacked body; a second plate portion provided to be separated from the first plate portion inside the stacked body, the second plate portion extending along the stacking direction of the stacked body and along the first direction, the second plate portion including a second plate conductor and a second sidewall insulating film, the second sidewall insulating film being provided between the second plate conductor and the stacked body; and a columnar portion provided inside the stacked body, the columnar portion extending along the stacking direction of the stacked body, the columnar portion being provided between the first plate portion and the second plate portion, the columnar portion including a semiconductor body and a memory film, the memory film being provided between the semiconductor body and the electrode layers, the memory film including a charge storage portion inside the film, a width of the electrode layer of the lower layer portion along a second direction being wider than a width of the electrode layer of the middle portion along the second direction, the second direction being orthogonal to the first direction along the major surface of the substrate, a width of the electrode layer of the upper layer portion along the second direction being wider than the width of the middle portion along the second direction. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification