CHANNEL REPLACEMENT AND BIMODAL DOPING SCHEME FOR BULK FINFET THRESHOLD VOLTAGE MODULATION WITH REDUCED PERFORMANCE PENALTY
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Accused Products
Abstract
A method includes removing a top portion of a substrate after implantation of a punch through stopper into the substrate; epitaxially growing undoped material on the substrate, thereby forming a channel; filling a top portion of the channel with an intermediate implant forming a vertically bi-modal dopant distribution, with one doping concentration peak in the top portion of the channel and another doping concentration peak in the punch through stopper; and patterning fins into the channel and the punch though stopper to form a finFET structure.
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Citations
26 Claims
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10-20. -20. (canceled)
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22-1. The method of claim 1, wherein the punch through stopper is disposed between an active fin and the substrate, wherein the active fin has a higher doping at a top of the active fin as compared to a bottom of the active fin.
Specification