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DEVICE LAYER THIN-FILM TRANSFER TO THERMALLY CONDUCTIVE SUBSTRATE

  • US 20170179307A1
  • Filed: 12/18/2015
  • Published: 06/22/2017
  • Est. Priority Date: 12/18/2015
  • Status: Active Grant
First Claim
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1. A semiconductor structure, comprising:

  • a thin-film device layer;

    an optoelectronic device disposed in the thin-film device layer, the optoelectronic device excitable by light at an application wavelength; and

    a surrogate substrate permanently attached to the thin film device layer, wherein the surrogate substrate is optically transparent at the application wavelength and has a thermal conductivity of at least 300 W/m-K.

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