DEVICE LAYER THIN-FILM TRANSFER TO THERMALLY CONDUCTIVE SUBSTRATE
First Claim
1. A semiconductor structure, comprising:
- a thin-film device layer;
an optoelectronic device disposed in the thin-film device layer, the optoelectronic device excitable by light at an application wavelength; and
a surrogate substrate permanently attached to the thin film device layer, wherein the surrogate substrate is optically transparent at the application wavelength and has a thermal conductivity of at least 300 W/m-K.
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Accused Products
Abstract
A semiconductor structure includes a thin-film device layer, an optoelectronic device disposed in the thin-film device layer, and a surrogate substrate permanently attached to the thin film device layer. The surrogate substrate is optically transparent and has a thermal conductivity of at least 300 W/m-K. The optoelectronic device excitable by visible light transmitted through the surrogate substrate. A method of fabricating the semiconductor structure includes fabricating the optoelectronic device in a device layer thin-film of SiC on a silicon wafer of a first diameter, transferring the device layer thin-film of SiC from the silicon wafer, and permanently bonding the device layer thin-film to a SiC surrogate substrate of a second diameter.
13 Citations
20 Claims
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1. A semiconductor structure, comprising:
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a thin-film device layer; an optoelectronic device disposed in the thin-film device layer, the optoelectronic device excitable by light at an application wavelength; and a surrogate substrate permanently attached to the thin film device layer, wherein the surrogate substrate is optically transparent at the application wavelength and has a thermal conductivity of at least 300 W/m-K. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of fabricating a semiconductor structure, comprising the steps of:
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providing a substrate in a form of a first wafer; growing an epitaxial layer of a material that is optically transparent and thermally conductive on the substrate; building at least one microelectronic device in the epitaxial layer; temporarily attaching the substrate to a handler using a removable/degradable adhesive; removing substantially all the substrate; applying a permanent adhesive to one of; the epitaxial layer, and a wafer of a surrogate substrate that is optically transparent and thermally conductive; permanently bonding together the epitaxial layer and the surrogate substrate, thereby forming an intermediate structure; and removing the handler and the removable/degradable adhesive from the intermediate structure, thereby forming the semiconductor structure. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. A semiconductor structure, comprising:
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a thin-film device layer; an optoelectronic device disposed in the thin-film device layer, the optoelectronic device excitable by light at an application wavelength; and a surrogate substrate permanently attached to the thin film device layer, wherein the surrogate substrate has a volume of substrate removed therefrom to form a via, the via aligned with a location of the optoelectronic device, a cross-sectional area of the via being about equal to an active area of the optoelectronic device, and a depth of the via being substantially less than a thickness of the surrogate substrate, wherein the light passes through the via and at least some of the surrogate substrate prior to reaching the optoelectronic device. - View Dependent Claims (20)
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Specification