EXTENDED SHORT-WAVE INFRARED STRAIN-LAYERED SUPERLATTICE ON INDIUM ARSENIDE SUBSTRATE AND ASSOCIATED METHODS
First Claim
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1. An infrared detector comprising:
- a first sub-layer comprising InAs; and
a second sub-layer adjacent to the first sub-layer comprising AlSb, AlAsSb, or InAlAsSb.
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Abstract
Materials and methods may be provided for short-wave infrared (SWIR) superlattice materials. The superlattice material includes a first sub-layer comprising InAs, and a second sub-layer adjacent to the first sub-layer including AlSb, AlAsSb, or InAlAsSb.
3 Citations
20 Claims
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1. An infrared detector comprising:
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a first sub-layer comprising InAs; and a second sub-layer adjacent to the first sub-layer comprising AlSb, AlAsSb, or InAlAsSb. - View Dependent Claims (2, 3, 4)
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5. A structure comprising:
a superlattice layer including a plurality of periods, each of the plurality of periods including; a first sub-layer comprising InAs; and a second sub-layer adjacent to the first sub-layer comprising AlSb, AlAsSb, or InAlAsSb. - View Dependent Claims (6, 7, 8, 9, 10, 11, 12)
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13. A method comprising:
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providing an InAs substrate; depositing InAs on the InAs substrate; and depositing AlSb, AlAsSb, or InAlAsSb on the InAs to form a strain-layered superlattice. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification