ADDITIVE COMPOSITION AND POSITIVE POLISHING SLURRY COMPOSITION INCLUDING THE SAME

• US 20170183538A1
• Filed: 12/15/2016
• Published: 06/29/2017
• Est. Priority Date: 12/24/2015
• Status: Active Grant

• Current Assignee: Kctech Co., Ltd.
• Original Assignee: Kctech Co., Ltd.
• Inventors: KWON, Jang Kuk, LEE, Sung Pyo, KWON, Chang Gil, HWANG, Jun Ha
• Granted Patent: US 10,494,547 B2
• Time in Patent Office: Days
• CPC Class Codes: C09G 1/02 containing abrasives or grinding agents abrasives as such C09K3/14; polishing of semi-conductors H01L
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step

Abstract

An additive composition and a positive polishing slurry composition including the additive composition are provided. The additive composition includes a cationic compound, an organic acid, a nonionic compound, and a pH adjuster.

Claims

1. An additive composition comprising:

a cationic compound;

an organic acid;

a nonionic compound; and

a pH adjuster.

2. The additive composition of claim 1, wherein the cationic compound comprises at least one selected from the group consisting of an amino acid, polyalkylene glycol, a high-molecular polysaccharide coupled to a glucosamine compound and an amine group-containing polymer.

3. The additive composition of claim 1, wherein the organic acid comprises at least one selected from the group consisting of acetic acid, citric acid, lactic acid, malic acid, maleic acid, malonic acid, glycolic acid, propionic acid, butyric acid, hydroxybutyric acid, nitrilotriacetic acid, picolinic acid, nicotinic acid, isonicotinic acid, fusaric acid, dinicotinic acid, dipicolinic acid, lutidinic acid, quinolinic acid, glutamic acid, alanine, glycine, cystine, histidine, asparagine, guanidine, hydrazine, formic acid, benzoic acid, oxalic acid, succinic acid, tricarballyic acid, tartaric acid, aspartic acid, glutaric acid, adipic acid, suberic acid, fumaric acid, phthalic acid and pyridinecarboxylic acid.

4. The additive composition of claim 1, wherein a ratio of the cationic compound:

the organic acid in the additive composition ranges from 2;

1 to 3;

1.

5. The additive composition of claim 1, wherein each of the cationic compound and the organic acid is present in an amount of 0.001% by weight (wt %) to 5 wt % in the additive composition.

6. The additive composition of claim 1, wherein the nonionic compound comprises at least one selected from the group consisting of polyethylene glycol (PEG), polypropylene glycol (PPG), polyvinylpyrrolidone (PVP), an ethylene oxide-propylene oxide copolymer, a polyethylene-propylene copolymer, polyalkyl oxide, polyethylene oxide (PEO), polyoxyethylene (POE) and polypropylene oxide.

7. The additive composition of claim 1, wherein the nonionic compound is present in an amount of 0.001 wt % to 1 wt % in the additive composition.

8. The additive composition of claim 1, wherein the pH adjuster comprises at least one selected from the group consisting of:

an acidic material comprising at least one selected from the group consisting of nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid, bromic acid, iodic acid, formic acid, malonic acid, maleic acid, oxalic acid, acetic acid, adipic acid, citric acid, propionic acid, fumaric acid, lactic acid, salicylic acid, pimelic acid, benzoic acid, succinic acid, phthalic acid, butyric acid, glutaric acid, glutamic acid, glycolic acid, asparaginic acid, tartaric acid and salts thereof; and

an alkaline material comprising at least one selected from the group consisting of ammonia, amino methyl propanol (AMP), potassium hydroxide, sodium hydroxide, magnesium hydroxide, rubidium hydroxide, cesium hydroxide, sodium hydrogen carbonate, sodium carbonate and imidazole.

9. The additive composition of claim 1, wherein the additive composition has pH ranging from 2 to 7.

10. A positive polishing slurry composition comprising:

the additive composition of claim 1; and

a slurry composition comprising abrasive particles.

11. The positive polishing slurry composition of claim 10, wherein a polishing selectivity of an oxide film:

a nitride film or the oxide film;

a polysilicon film ranges from 10;

1 to 80;

1 during polishing of a blanket wafer including the oxide film and either the nitride film or the polysilicon film using the positive polishing slurry composition.

12. The positive polishing slurry composition of claim 11, wherein the oxide film has a polishing rate of 2,000 angstroms per minute (Å

/min) to 4,000 Å

/min, and

wherein the nitride film or the polysilicon film has a polishing rate of 20 Å

/min to 200 Å

/min.

13. The positive polishing slurry composition of claim 10, wherein a polishing selectivity of an oxide film:

a nitride film or the oxide film;

a polysilicon film ranges from 1;

1 to 5;

1 during polishing of a pattern wafer including the oxide film and either the nitride film or the polysilicon film using the positive polishing slurry composition.

14. The positive polishing slurry composition of claim 10, wherein dishing of 200 Å

or less occurs, after a wafer that includes an oxide film and either a nitride film or a polysilicon film and that has a line-and-space pattern with a line width of 100 micrometers (μ

m) and a pitch less than 100 μ

m is polished using the positive polishing slurry composition, and

wherein dishing of 320 Å

or less occurs, after a wafer that includes an oxide film and either a nitride film or a polysilicon film and that has a line-and-space pattern with a line width of 100 μ

m or greater and 1 millimeters (mm) or less and a pitch of 100 μ

m or greater and 1 mm or less is polished using the positive polishing slurry composition.