PATTERN-FORMING METHOD
First Claim
1. A pattern-forming method comprising:
- applying a radiation-sensitive composition on a substrate to provide a film on the substrate;
exposing the film; and
developing the film exposed,wherein;
the radiation-sensitive composition comprises a metal-containing component that is a metal compound having a hydrolyzable group, a hydrolysis product of the metal compound having a hydrolyzable group, a hydrolytic condensation product of the metal compound having a hydrolyzable group, or a combination thereof; and
a content of a transition metal atom in the metal-containing component with respect to total metal atoms in the metal-containing component is no less than 50 atomic %.
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Accused Products
Abstract
A pattern-forming method includes applying a radiation-sensitive composition on a substrate to provide a film on the substrate. The film is exposed. The film exposed is developed. The radiation-sensitive composition includes a metal-containing component that is a metal compound having a hydrolyzable group, a hydrolysis product of the metal compound having a hydrolyzable group, a hydrolytic condensation product of the metal compound having a hydrolyzable group, or a combination thereof. A content of a transition metal atom in the metal-containing component with respect to total metal atoms in the metal-containing component is no less than 50 atomic %.
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Citations
6 Claims
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1. A pattern-forming method comprising:
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applying a radiation-sensitive composition on a substrate to provide a film on the substrate; exposing the film; and developing the film exposed, wherein; the radiation-sensitive composition comprises a metal-containing component that is a metal compound having a hydrolyzable group, a hydrolysis product of the metal compound having a hydrolyzable group, a hydrolytic condensation product of the metal compound having a hydrolyzable group, or a combination thereof; and a content of a transition metal atom in the metal-containing component with respect to total metal atoms in the metal-containing component is no less than 50 atomic %. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification