Metrology Methods, Metrology Apparatus and Device Manufacturing Method
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Abstract
Hybrid metrology apparatus (1000, 1100, 1200, 1300, 1400) measures a structure (T) manufactured by lithography. An EUV metrology apparatus (244, IL1/DET1) irradiates the structure with EUV radiation and detects a first spectrum from the structure. Another metrology apparatus (240, IL2/DET2) irradiates the structure with second radiation comprising EUV radiation or longer-wavelength radiation and detects a second spectrum. Using the detected first spectrum and the detected second spectrum together, a processor (MPU) determines a property (CD/OV) of the structure. The spectra can be combined in various ways. For example, the first detected spectrum can be used to control one or more parameters of illumination and/or detection used to capture the second spectrum, or vice versa. The first spectrum can be used to distinguish properties of different layers (T1, T2) in the structure. First and second radiation sources (SRC1, SRC2) may share a common drive laser (LAS).
35 Citations
67 Claims
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1-47. -47. (canceled)
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48. A hybrid metrology apparatus for measuring a property of a structure manufactured by a lithographic process, the hybrid metrology apparatus comprising:
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a first illumination system configured to irradiate the structure with first radiation, the first radiation comprising one or more wavelengths in the range 1 nm to 100 nm; a first detection system configured to detect a first spectrum comprising at least part of the first radiation reflected by the periodic structure; a second illumination system configured to irradiate the structure with second radiation, the second radiation comprising one or more wavelengths in the range 1 nm to 100 nm or in the range 100 nm to 1000 nm; a second detection system configured to detect a second spectrum comprising at least part of the second radiation reflected by the periodic structure; and a processing system configured to use the detected first spectrum and the detected second spectrum to determine a property of the structure. - View Dependent Claims (49, 50, 51, 52, 53, 54, 55, 56, 57)
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58. A method of measuring a property of a structure manufactured by a lithographic process, the method comprising:
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irradiating the structure with first radiation, the first radiation comprising one or more wavelengths in the range 1 nm to 100 nm; detecting a first spectrum comprising at least part of the first radiation reflected by the periodic structure; irradiating the structure with second radiation, the second radiation comprising one or more wavelengths in the range 1 nm to 100 nm or in the range 100 nm to 1000 nm; detecting a second spectrum comprising at least part of the second radiation reflected by the periodic structure; and determining a property of the structure based on the detected first spectrum and the detected second spectrum. - View Dependent Claims (59, 60, 61, 62, 63, 64, 65)
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66. A device manufacturing method comprising:
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transferring a pattern from a patterning device onto a substrate using a lithographic process, the pattern defining at least one periodic structure; measuring one or more properties of the periodic structure to determine a value for one or more parameters of the lithographic process; and applying a correction in subsequent operations of the lithographic process in accordance with the measured property, wherein the measuring the properties of the periodic structure includes measuring a property using the hybrid metrology apparatus comprising; a first illumination system configured to irradiate the structure with first radiation, the first radiation comprising one or more wavelengths in the range 1 nm to 100 nm; a first detection system configured to detect a first spectrum comprising at least part of the first radiation reflected by the periodic structure; a second illumination system configured to irradiate the structure with second radiation, the second radiation comprising one or more wavelengths in the range 1 nm to 100 nm or in the range 100 nm to 1000 nm; a second detection system configured to detect a second spectrum comprising at least part of the second radiation reflected by the periodic structure; and a processing system configured to use the detected first spectrum and the detected second spectrum to determine a property of the structure.
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67. A device manufacturing method comprising:
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transferring a pattern from a patterning device onto a substrate using a lithographic process, the pattern defining at least one periodic structure; measuring one or more properties of the periodic structure to determine a value for one or more parameters of the lithographic process; and applying a correction in subsequent operations of the lithographic process in accordance with the measured property, wherein the measuring the properties of the periodic structure includes measuring a property using a method composing; irradiating the structure with first radiation, the first radiation comprising one or more wavelengths in the range 1 nm to 100 nm; detecting a first spectrum comprising at least part of the first radiation reflected by the periodic structure; irradiating the structure with second radiation, the second radiation comprising one or more wavelengths in the range 1 nm to 100 nm or in the range 100 nm to 1000 nm; detecting a second spectrum comprising at least part of the second radiation reflected by the periodic structure; and determining a property of the structure based on the detected first spectrum and the detected second spectrum.
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Specification