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ISOLATION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

  • US 20170186642A1
  • Filed: 08/12/2016
  • Published: 06/29/2017
  • Est. Priority Date: 12/23/2015
  • Status: Active Grant
First Claim
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1. A method for manufacturing a semiconductor device, comprising:

  • forming a first trench and a second trench in a substrate, wherein the first and the second trenches communicate with each other, wherein the second trench is formed wider than the first trench;

    forming a liner layer over an inner surface of the first trench and over an inner surface of the second the trench;

    forming a capping layer over the liner layer to form a merged overhang and a non-merged overhang, wherein the merged overhang fills a top portion of the first trench, wherein the non-merged overhang opens a top portion of the second trench; and

    forming a gap-fill layer over the capping layer to fill a lower portion of the first trench and the second trench.

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