ISOLATION STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A method for manufacturing a semiconductor device, comprising:
- forming a first trench and a second trench in a substrate, wherein the first and the second trenches communicate with each other, wherein the second trench is formed wider than the first trench;
forming a liner layer over an inner surface of the first trench and over an inner surface of the second the trench;
forming a capping layer over the liner layer to form a merged overhang and a non-merged overhang, wherein the merged overhang fills a top portion of the first trench, wherein the non-merged overhang opens a top portion of the second trench; and
forming a gap-fill layer over the capping layer to fill a lower portion of the first trench and the second trench.
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Accused Products
Abstract
A method for manufacturing a semiconductor device includes forming a first trench and a second trench in a substrate, the first and the second trenches communicate with each other, the second trench may be formed wider than the first trench; forming a liner layer over an inner surface of the first trench and over an inner surface of the second the trench; forming a capping layer over the liner layer to form a merged overhang and a non-merged overhang, the merged overhang may be fill a top portion of the first trench, the non-merged overhang may be open a top portion of the second trench; and forming a gap-fill layer over the capping layer to fill a lower portion of the first trench and the second trench.
15 Citations
20 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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forming a first trench and a second trench in a substrate, wherein the first and the second trenches communicate with each other, wherein the second trench is formed wider than the first trench; forming a liner layer over an inner surface of the first trench and over an inner surface of the second the trench; forming a capping layer over the liner layer to form a merged overhang and a non-merged overhang, wherein the merged overhang fills a top portion of the first trench, wherein the non-merged overhang opens a top portion of the second trench; and forming a gap-fill layer over the capping layer to fill a lower portion of the first trench and the second trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification