PACKAGING OPTOELECTRONIC COMPONENTS AND CMOS CIRCUITRY USING SILICON-ON-INSULATOR SUBSTRATES FOR PHOTONICS APPLICATIONS

• US 20170186739A1
• Filed: 03/13/2017
• Published: 06/29/2017
• Est. Priority Date: 08/13/2015
• Status: Active Grant

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Meghelli, Mounir, Budd, Russell A., Orcutt, Jason Scott, Plouchart, Jean-Olivier
• Granted Patent: US 9,935,089 B2
• Time in Patent Office: Days
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 2006/12069 Organic material
• CPC Class Codes: G02B 2006/12123 Diode
• CPC Class Codes: G02B 2006/12147 Coupler
• CPC Class Codes: G02B 6/122 Basic optical elements, e.g. light-guiding paths
• CPC Class Codes: G02B 6/1221 made from organic materials
• CPC Class Codes: G02B 6/124 Geodesic lenses or integrated gratings
• CPC Class Codes: G02B 6/132 by deposition of thin films
• CPC Class Codes: G02B 6/34 utilising prism or grating G02B6/293 takes precedence
• CPC Class Codes: G02B 6/4204 the coupling comprising intermediate optical elements, e.g. lenses, holograms encapsulated active devices H01S5/02208, H01L33/52
• CPC Class Codes: G02B 6/4214 the intermediate optical element having redirecting reflective means, e.g. mirrors, prisms for deflecting the radiation from horizontal to down- or upward direction toward a device G02B6/4246 takes precedence
• CPC Class Codes: G02B 6/4274 Electrical aspects G02B6/4263 and G02B6/4265 take precedence
• CPC Class Codes: G02B 6/428 containing printed circuit boards [PCB]
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 21/84 the substrate being other than a semiconductor body, e.g. being an insulating body
• CPC Class Codes: H01L 2223/58 Structural electrical arrangements for semiconductor devices not otherwise provided for
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 23/367 Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/485 : consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts H01L23/4821, H01L23/4822, H01L23/4824, H01L23/4825 take precedence; materials H01L23/532, bond pads H01L24/02, bump connectors H01L24/10
• CPC Class Codes: H01L 23/49827 : Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 : Geometry or layout
• CPC Class Codes: H01L 23/49894 : Materials of the insulating layers or coatings
• CPC Class Codes: H01L 23/585 : comprising conductive layers or plates or strips or rods or rings H01L23/60, H01L23/62, H01L23/64, H01L23/66 take precedence
• CPC Class Codes: H01L 25/117 : Stacked arrangements of devices
• CPC Class Codes: H01L 25/167 : comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/1203 : the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01S 5/021 : Silicon based substrates
• CPC Class Codes: H01S 5/0215 : Bonding to the substrate
• CPC Class Codes: H01S 5/02325 : Mechanically integrated components on mount members or optical micro-benches
• CPC Class Codes: H01S 5/0237 : by soldering
• CPC Class Codes: H01S 5/02469 : Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
• CPC Class Codes: H01S 5/026 : Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers stabilisation of output H01S5/06
• CPC Class Codes: H01S 5/1032 : Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
• CPC Class Codes: H01S 5/11 : Comprising a photonic bandgap structure
• CPC Class Codes: H01S 5/18341 : Intra-cavity contacts
• CPC Class Codes: H01S 5/18361 : Structure of the reflectors, e.g. hybrid mirrors
• CPC Class Codes: H01S 5/1838 : Reflector bonded by wafer fusion or by an intermediate compound

Abstract

Package structures and methods are provided to integrate optoelectronic and CMOS devices using SOI semiconductor substrates for photonics applications. For example, a package structure includes an integrated circuit (IC) chip, and an optoelectronics device and interposer mounted to the IC chip. The IC chip includes a SOI substrate having a buried oxide layer, an active silicon layer disposed adjacent to the buried oxide layer, and a BEOL structure formed over the active silicon layer. An optical waveguide structure is patterned from the active silicon layer of the IC chip. The optoelectronics device is mounted on the buried oxide layer in alignment with a portion of the optical waveguide structure to enable direct or adiabatic coupling between the optoelectronics device and the optical waveguide structure. The interposer is bonded to the BEOL structure, and includes at least one substrate having conductive vias and wiring to provide electrical connections to the BEOL structure.

Claims

1. A method to construct a package structure, comprising:

fabricating a first integrated circuit chip comprising a silicon-on-insulator (SOI) substrate, wherein the SOI substrate comprises a bulk substrate layer, a buried oxide layer disposed on the bulk substrate layer, an active silicon layer disposed on the buried oxide layer, and a BEOL (back-end-of-line) structure formed over the active silicon layer, wherein the active silicon layer comprises active circuity and an integrated optical waveguide structure;

bonding a first surface of an interposer substrate to the BEOL structure of the first integrated circuit chip;

forming conductive through vias in the interposer substrate in alignment with contact pads of the BEOL structure, and forming contact pads on a second surface of the interposer substrate;

removing the bulk substrate layer to expose the buried oxide layer;

forming one or more inverted pad structures through the exposed buried oxide layer down to buried pads within the BEOL structure;

forming solder bumps on the contact pads of the interposer substrate; and

mounting an optoelectronics device to the first integrated circuit chip by bonding the optoelectronics device to ends of the inverted pad structures exposed through the buried oxide layer, and such that the optoelectronics device is aligned with a first end of the integrated optical waveguide structure of the first integrated circuit chip.

2. The method of claim 1, further comprising depositing and patterning a capping layer on the buried oxide layer after the bulk substrate layer is removed and prior to mounting the optoelectronics device.

3. The method of claim 1, further comprising bonding a waveguide core of a flexible polymer waveguide to portion of the buried oxide layer in alignment with a second end of the integrated optical waveguide structure, wherein the waveguide core is adiabatically coupled to the second end of the integrated optical waveguide structure through the buried oxide layer.

4. The method of claim 1, wherein the optoelectronics device is adiabatically coupled to the first end of the integrated optical waveguide structure through the buried oxide layer.

5. The method of claim 1, wherein first end of the integrated optical waveguide structure comprises a vertical grating coupler to couple light between the optical waveguide structure and the optoelectronics device.

6. The method of claim 1, wherein the optoelectronics device comprises at least one of a laser diode, a photodiode, a photonics device, and a combination thereof.

7. The method of claim 1, wherein the interposer substrate is formed of a material comprising one of glass, high-resistivity silicon, and an insulator material.

8. The method of claim 1, wherein the active circuitry comprises at least one of optical receiver circuitry and optical transmitter circuity, and wherein the BEOL structure provides electrical connections from the active circuity to the optoelectronics device.

9. The method of claim 1, further comprising coupling a second integrated circuit chip to the first integrated circuit chip, wherein the second integrated circuit chip comprises a processor electrically coupled to the active circuitry of the first integrated circuit chip.

10. The method of claim 9, wherein coupling the second integrated circuit chip to the first integrated circuit chip comprises:

flip-chip mounting the second integrated circuit chip to contact pads on a first side of an application board; and

bonding the solder bumps on the contact pads of the interposer substrate to contact pads on the first side of the application board;

wherein the application board comprises a plurality of high-speed transmission lines formed on the first side of the application board to enable electrical communication between the process of the second integrated circuit chip and the active circuity of the first integrated circuit chip bonded to the interposer substrate.

11. The method of claim 9, wherein coupling the second integrated circuit chip to the first integrated circuit chip comprises using the solder bumps on the contact pads of the interposer substrate to bond the interposer substrate to an active surface of the second integrated circuit chip.

18. The method of claim 9, wherein coupling the photonics package to the second integrated circuit chip comprises bonding the interposer of the photonics package to an active surface of the second integrated circuit chip.

19. The method of claim 18, further comprising:

mounting a portion of the active surface of second integrated circuit chip to a first side of a package interposer with the photonics package disposed within an opening formed through the package interposer from the first side to a second side of the package interposer; and

mounting the second side of the package interposer to an application board.

12. A method to construct a package structure, comprising:

fabricating a photonics package comprising;

a first integrated circuit chip comprising an insulating layer, an active silicon layer disposed adjacent to the insulating layer, and a BEOL (back-end-of-line) structure formed over the active silicon layer, wherein the active silicon layer comprises active circuitry and an integrated optical waveguide structure patterned from the active silicon layer;

an optoelectronics device mounted on the insulating layer of the first integrated circuit chip in alignment with a portion of the integrated optical waveguide structure, and electrically connected to the active circuity; and

an interposer bonded to the BEOL structure of the first integrated circuit chip, the interposer comprising at least one substrate having a plurality of conductive through vias and wiring to provide electrical connections to the BEOL structure; and

coupling the photonics package to a second integrated circuit chip, wherein the second integrated circuit chip comprises a processor coupled to the active circuitry of the first integrated circuit chip.

13. The method of claim 12, wherein the optoelectronics device is adiabatically coupled to the integrated optical waveguide structure through the buried oxide layer.

14. The method of claim 12, wherein the integrated optical waveguide structure comprises a vertical grating coupler to couple light between the optical waveguide structure and the optoelectronics device.

15. The method of claim 12, wherein the optoelectronics device comprises at least one of a laser diode, a photodiode, a photonics device, and a combination thereof.

16. The method of claim 12, wherein the active circuitry comprises at least one of optical receiver circuitry and optical transmitter circuity, wherein the BEOL structure provides electrical connections from the active circuity to the optoelectronics device.

17. The method of claim 12, wherein coupling the photonics package to the second integrated circuit chip comprises:

flip-chip mounting the second integrated circuit chip to contact pads a first side of an application board; and

bonding the interposer of the photonics package to contact pads on the first side of the application board;

wherein the application board comprises a plurality of high-speed transmission lines formed on the first side of the application board to enable electrical communication between the processor of the second integrated circuit chip and the active circuitry of the first integrated circuit chip of the photonics package.

20. The method of claim 12, wherein coupling the photonics package to the second integrated circuit chip comprises:

mounting the interposer of the photonics package to a first side of a package interposer; and

mounting the second integrated circuit chip to a second side of the package interposer, opposite the first side of the package interposer;

wherein the package interposer comprises electrical wiring and through vias to provide electrical connections between the photonics package and the second integrated circuit chip; and

mounting a portion of the first side of the package interposer to an application board.