Heterostructure Including Anodic Aluminum Oxide Layer
First Claim
Patent Images
1. A semiconductor structure comprising:
- a first semiconductor layer;
an anodic aluminum oxide layer immediately adjacent to the first semiconductor layer, wherein the anodic aluminum oxide layer includes a plurality of pores extending to an adjacent surface of the first semiconductor layer;
a first material penetrating a first subset of the plurality of pores and directly contacting the first semiconductor layer; and
a second material penetrating a second subset of the plurality of pores distinct from the first subset, wherein the second material is distinct from the first material.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor structure. A filler material can penetrate at least some of the plurality of pores and directly contact the surface of the semiconductor structure. In an illustrative embodiment, multiple types of filler material at least partially fill the pores of the aluminum oxide layer.
-
Citations
20 Claims
-
1. A semiconductor structure comprising:
-
a first semiconductor layer; an anodic aluminum oxide layer immediately adjacent to the first semiconductor layer, wherein the anodic aluminum oxide layer includes a plurality of pores extending to an adjacent surface of the first semiconductor layer; a first material penetrating a first subset of the plurality of pores and directly contacting the first semiconductor layer; and a second material penetrating a second subset of the plurality of pores distinct from the first subset, wherein the second material is distinct from the first material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. An optoelectronic device comprising:
a heterostructure including; an active region configured to emit radiation during operation of the device; an anodic aluminum oxide layer located on a first side of the active region, wherein the anodic aluminum oxide layer includes a plurality of pores extending to an adjacent surface in the heterostructure; and a first filler material penetrating only a subset of a plurality of openings of the anodic aluminum oxide layer. - View Dependent Claims (12, 13, 14, 15, 16)
-
17. A method of fabricating an optoelectronic device, the method comprising:
forming a heterostructure for the optoelectronic device, wherein the forming includes; forming an active region configured to emit radiation during operation of the device; forming an anodic aluminum oxide layer located on a first side of the active region, wherein the anodic aluminum oxide layer includes a plurality of pores extending to an adjacent surface in the heterostructure; and causing a first filler material to penetrate only a subset of a plurality of openings of the anodic aluminum oxide layer. - View Dependent Claims (18, 19, 20)
Specification