SEMICONDUCTOR LIGHT-EMITTING ELEMENT

• US 20170186917A1
• Filed: 06/10/2015
• Published: 06/29/2017
• Est. Priority Date: 06/10/2014
• Status: Active Grant

• Current Assignee: Lumens Co., Ltd.
• Original Assignee: Semicon Light Co., Ltd.
• Inventors: JEON, Soo Kun, CHOI, Il Gyun, JIN, Geun Mo
• Granted Patent: US 10,008,635 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/64 : Heat extraction or cooling elements

Abstract

Disclosed is a semiconductor light emitting device including: a plurality of semiconductor layers; a non-conductive reflective film which is formed on the plurality of semiconductor layers; and first and second electrodes formed on the non-conductive reflective film, wherein a spacing between the first electrode and the second electrode is 80 μm or greater, and a ratio of a combined area of the first and second electrodes to a planform area of the semiconductor light emitting device as seen on a top view is 0.7:1 or less.

Claims

1. A semiconductor light emitting device comprising:

a plurality of semiconductor layers sequentially formed on a growth substrate, the plurality of semiconductor layers including a first semiconductor having a first conductivity type, a second semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer interposed between the first and second semiconductor layers and adapted to generate light by electron-hole recombination;

a non-conductive reflective film which is formed on the plurality of semiconductor layers, and reflects the light generated from the active layer towards the growth substrate;

a first electrode which is formed on the non-conductive reflective film, and electrically communicates with the first semiconductor layer to provide the first semiconductor layer with either electrons or holes; and

a second electrode which is formed on the non-conductive reflective film, opposite to the first electrode, and electrically communicates with the second semiconductor layer to provide the second semiconductor layer with either electrons if holes are provided to the first semiconductor layer or holes if electrons are provided to the first semiconductor layer,

wherein a spacing between the first electrode and the second electrode is 80 μ

m or greater, and

a ratio of a combined area of the first and second electrodes to a planform area of the semiconductor light emitting device as seen on a top view is 0.7;

1 or less.

2. The semiconductor light emitting device according to claim 1, wherein at least one of the first electrode and the second electrode has a plurality of sub-electrodes on the non-conductive reflective, with the sub-electrodes being spaced from each other.

3. The semiconductor light emitting device according to claim 1, wherein the first electrode and the second electrode have a spacing of 400 μ

m or less therebetween.

4. The semiconductor light emitting device according to claim 1, wherein the non-conductive reflective film comprises a Distributed Bragg Reflector.

5. The semiconductor light emitting device according to claim 1, wherein the first electrode and the second electrode each comprise a reflective layer in contact with the non-conductive reflective film;

a barrier layer on the reflective layer; and

a bonding layer on the barrier layer.

6. The semiconductor light emitting device according to claim 1, wherein a lateral face of the substrate, lateral faces of the plurality of the semiconductor layers, and lateral faces of the first and second electrodes corresponding to edges of the plurality of the semiconductor layers become cutting faces when the plurality of semiconductor light emitting devices in a wafer state is divided into individual semiconductor light emitting devices.

7. The semiconductor light emitting device according to claim 1, further comprising:

a first electrical connection which passes through the non-conductive reflective film and electrically connects the first electrode and the first semiconductor layer; and

a second electrical connection which passes through the non-conductive reflective film and electrically connects the second electrode and the second semiconductor layer,

wherein the first electrode comprises a plurality of first sub-electrodes on the non-conductive reflective film, with the sub-electrodes being spaced apart from each other,

the second electrode comprises a plurality of second sub-electrodes on the non-conductive reflective film, with the sub-electrodes being spaced apart from each other, and

each of the first sub-electrodes is connected with the first electrical connection, and each of the second sub-electrodes is connected with the second electrical connection.

8. The semiconductor light emitting device according to claim 2, wherein the plurality of sub-electrodes comprises island-type sub-electrodes;

and extending-type sub-electrodes that are stretched out.

9. The semiconductor light emitting device according to claim 7, further comprising:

a first lower electrode which is formed on an exposed portion of the first semiconductor layer by mesa-etching, and is connected with the first electrical connection; and

a second lower electrode which is connected with the second electrical connection between the non-conductive reflective film and the plurality of semiconductor layers.

10. The semiconductor light emitting device according to claim 1, further comprising:

an insulating film formed between the non-conductive reflective film and the first and second electrodes;

a first connecting electrode and a second connecting electrode formed between the non-conductive reflective film and the insulating film;

a first lower electrical connection which passes through the non-conductive reflective film and electrically connects the first connecting electrode and the first semiconductor layer;

a second lower electrical connection which passes through the non-conductive reflective film and electrically connects the second connecting electrode and the second semiconductor layer;

a first upper electrical connection which passes through the insulating film and is connected with the first connecting electrode; and

a second upper electrical connection which passes through the insulating film and is connected with the second connecting electrode.