METHODS OF FORMING PATTERNS USING COMPOSITIONS FOR AN UNDERLAYER OF PHOTORESIST

• US 20170199459A1
• Filed: 01/13/2017
• Published: 07/13/2017
• Est. Priority Date: 01/13/2016
• Status: Active Grant

• Current Assignee: Dongjin Semichem Co., Ltd., Samsung Electronics Co. Ltd.
• Original Assignee: Dongjin Semichem Co., Ltd., Samsung Electronics Co. Ltd.
• Inventors: RYU, Jin-A, LEE, Jung-Youl, MOON, Kyung-Lyul, KANG, Yool, KIM, Hyun-Jin, JEOUNG, Yu-Jin, HAN, Man-Ho
• Granted Patent: US 10,712,662 B2
• Time in Patent Office: Days
• CPC Class Codes: C08G 18/022 the polymeric products containing isocyanurate groups
• CPC Class Codes: C09D 175/00 Coating compositions based on polyureas or polyurethanes; Coating compositions based on derivatives of such polymers
• CPC Class Codes: G03F 7/0045 with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
• CPC Class Codes: G03F 7/091 characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: G03F 7/162 Coating on a rotating support, e.g. using a whirler or a spinner
• CPC Class Codes: G03F 7/168 Finishing the coated layer, e.g. drying, baking, soaking
• CPC Class Codes: G03F 7/2041 in the presence of a fluid, e.g. immersion; using fluid cooling means
• CPC Class Codes: G03F 7/322 Aqueous alkaline compositions
• CPC Class Codes: G03F 7/38 Treatment before imagewise removal, e.g. prebaking G03F7/265 takes precedence
• CPC Class Codes: H01L 21/0276 using an anti-reflective coating anti-reflective coating for lithography in general G03F7/09
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3086 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 28/00 Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor testing or measuring during manufacture H01L22/00; integration methods H01L21/70; integrated circuits H01L27/00; two-terminal components with a potential-jump or surface barrier H01L29/00; resistors in general H01C; inductors in general H01F; capacitors in general H01G

Abstract

A method of forming a pattern is disclosed. The method includes preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure; applying the composition on a substrate to form an underlayer; forming a photoresist layer on the underlayer; etching the photoresist layer to form a photoresist pattern; and patterning the substrate using the photoresist pattern.

Claims

1. A method of forming a pattern, comprising:

preparing a composition that includes a solvent and a polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure;

applying the composition on a substrate to form an underlayer;

forming a photoresist layer on the underlayer;

etching the photoresist layer to form a photoresist pattern; and

patterning the substrate or a layer on the substrate using the photoresist pattern.

2. The method according to claim 1, wherein each of the isocyanurate units includes a self-crosslinking side chain moiety.

3. The method according to claim 1, wherein the repeating unit includes at least two different types of self-crosslinking side chain moieties.

4. The method according to claim 2, wherein the repeating unit is represented by Chemical Formula 1:

5. The method according to claim 4, wherein the repeating unit includes at least one of structures represented by Chemical Formulae 1-1 to 1-4:

6. The method according to claim 2, wherein the repeating unit includes at least three isocyanurate units.

7. The method according to claim 6, wherein the repeating unit is represented by Chemical Formula 2:

8. The method according to claim 1, further comprising preparing an acid generator.

9. The method according to claim 8, wherein the composition consists of the self-crosslinkable polymer, the acid generator and the solvent, and is devoid of a cross-linking agent.

10. A method of forming a pattern, comprising:

preparing a composition that includes a self-crosslinkable polymer including a repeating unit in which at least one isocyanurate unit having a first structure is connected to another isocyanurate unit having a second structure different from the first structure, and a solvent;

coating the composition on an object layer to form an underlayer;

forming a photoresist layer on the underlayer;

performing an exposure process on the photoresist layer such that the photoresist layer is divided into an exposed portion and a non-exposed portion;

removing one of the exposed portion or the non-exposed portion to form a photoresist pattern; and

patterning the object layer using the photoresist pattern.

11. The method of claim 10, wherein a refractive index of the underlayer exceeds about 1.9.

12. The method of claim 11, wherein the refractive index of the underlayer is in a range from about 1.94 to about 2.

13. The method of claim 10, wherein the exposure process is performed using an ArF light source and an ArF immersion light source.

14. The method of claim 10, wherein forming the underlayer includes thermally cross-linking the self-crosslinkable polymer included in the composition.

15. The method of claim 14, wherein thermally cross-linking includes a baking process performed at a temperature from about 150°

C. to about 250°

C.

16. The method according to claim 10, wherein each of the isocyanurate units includes a self-crosslinking side chain moiety.

17. The method according to claim 10, wherein the repeating unit includes at least two different types of self-crosslinking side chain moieties.

18. The method according to claim 16, wherein the repeating unit is represented by Chemical Formula 1:

19. The method according to claim 18, wherein the repeating unit includes at least one of structures represented by Chemical Formulae 1-1 to 1-4:

20. A method of forming a pattern for a semiconductor device, comprising:

preparing an underlayer composition that includes a solvent and a polymer including a repeating unit having a plurality of isocyanurate units in which at least one isocyanurate unit having a first chemical composition is connected to another isocyanurate unit having a second chemical composition different from the first chemical composition;

applying the underlayer composition on a semiconductor substrate to form an underlayer;

forming a photoresist layer on the underlayer;

etching a portion of the photoresist layer to form a photoresist pattern; and

patterning the semiconductor substrate or a layer on the semiconductor substrate using the photoresist pattern.