ANTI-REFLECTIVE COATING CLEANING AND POST-ETCH RESIDUE REMOVAL COMPOSITION HAVING METAL, DIELECTRIC AND NITRIDE COMPATIBILITY
First Claim
1. A liquid removal composition, comprising at least one fluoride-containing compound, at least one organic solvent, optionally water, and at least one of a dielectric passivating agent and/or a corrosion inhibitor and/or at least one silicon-containing compound, wherein said liquid removal composition is useful for removing anti-reflective coating (ARC) materials and/or post-etch residue from a microelectronic device having such materials and/or residue thereon.
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Accused Products
Abstract
A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.
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Citations
20 Claims
- 1. A liquid removal composition, comprising at least one fluoride-containing compound, at least one organic solvent, optionally water, and at least one of a dielectric passivating agent and/or a corrosion inhibitor and/or at least one silicon-containing compound, wherein said liquid removal composition is useful for removing anti-reflective coating (ARC) materials and/or post-etch residue from a microelectronic device having such materials and/or residue thereon.
- 14. A method of removing ARC material and/or post-etch residue from a microelectronic device having said material and residue thereon, said method comprising contacting the microelectronic device with a liquid removal composition for sufficient time to at least partially remove said material and residue from the microelectronic device, wherein the liquid removal composition comprises at least one fluoride-containing compound, at least one organic solvent, optionally water, and at least one of a dielectric passivating agent and/or a corrosion inhibitor and/or at least one silicon-containing compound.
Specification