GALLIUM NITRIDE SUBSTRATE AND MANUFACTURING METHOD OF NITRIDE SEMICONDUCTOR CRYSTAL
First Claim
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1. A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface has a normal vector of which angle to the <
- 10−
10>
direction is from 0 to 10°
,an n-type carrier density is 3×
1018 cm−
3 or more, anda stacking fault density in the first main surface is 50 cm−
1 or less.
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Abstract
The main purpose of the present invention is to provide: a nonpolar or semipolar GaN substrate, in which a nitride semiconductor crystal having a low stacking fault density can be epitaxially grown on the main surface of the substrate, and a technique required for the production of the substrate.
This invention provides: a method for manufacturing an M-plane GaN substrate comprising;
- forming a mask pattern having a line-shaped opening parallel to an a-axis of a C-plane GaN substrate on an N-polar plane of the C-plane GaN substrate,
- growing a plane-shape GaN crystal of which thickness direction is an m-axis direction from the opening of the mask pattern by an ammonotharmal method, and
- cutting out the M-plane GaN substrate from the plane-shape GaN crystal.
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Citations
19 Claims
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1. A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface has a normal vector of which angle to the <
- 10−
10>
direction is from 0 to 10°
,an n-type carrier density is 3×
1018 cm−
3 or more, anda stacking fault density in the first main surface is 50 cm−
1 or less. - View Dependent Claims (2, 3, 4, 5, 6, 7, 14, 15, 18)
- 10−
-
8. A gallium nitride substrate comprising a first main surface and a second main surface opposite thereto, wherein the first main surface has a normal vector of which angle to the <
- 10−
10>
direction is from 0 to 10°
,an oxygen concentration is 4×
1018 cm−
3 or more, anda stacking fault density in the first main surface is 50 cm−
1 or less. - View Dependent Claims (9, 10, 11, 12, 13, 16, 17, 19)
- 10−
Specification