LOW WARPAGE WAFER BONDING THROUGH USE OF SLOTTED SUBSTRATES
First Claim
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1. A method comprising:
- providing a first wafer comprising a plurality of light emitting semiconductor devices grown on a growth substrate;
providing a second wafer comprising a first surface, a second surface opposite the first surface, and a plurality of slots formed on the second surface;
aligning the plurality of slots with boundaries between light emitting semiconductor devices on the first wafer; and
bonding the first surface of the second wafer to the first wafer.
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Abstract
In a wafer bonding process, one or both of two wafer substrates are scored prior to bonding. By creating slots in the substrate, the wafer'"'"'s characteristics during bonding are similar to that of a thinner wafer, thereby reducing potential warpage due to differences in CTE characteristics associated with each of the wafers. Preferably, the slots are created consistent with the singulation/dicing pattern, so that the slots will not be present in the singulated packages, thereby retaining the structural characteristics of the full-thickness substrates.
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Citations
17 Claims
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1. A method comprising:
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providing a first wafer comprising a plurality of light emitting semiconductor devices grown on a growth substrate; providing a second wafer comprising a first surface, a second surface opposite the first surface, and a plurality of slots formed on the second surface; aligning the plurality of slots with boundaries between light emitting semiconductor devices on the first wafer; and bonding the first surface of the second wafer to the first wafer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method comprising:
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providing a first wafer comprising a plurality of light emitting semiconductor devices grown on a growth substrate; providing a second wafer comprising a first surface, a second surface opposite the first surface, and a plurality of slots formed on the second surface; bonding the first surface of the second wafer to the first wafer; and after bonding the first surface of the second wafer to the first wafer, removing the growth substrate. - View Dependent Claims (9, 10, 11, 12)
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13. A method comprising:
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determining a thickness of a submount wafer; determining a maximum allowable warpage of a wafer of light emitting semiconductor devices; determining a maximum effective thickness of the submount wafer, based on the maximum allowable warpage of the wafer of light emitting semiconductor devices; comparing the thickness of the submount wafer to the maximum effective thickness of the submount wafer; and if the thickness of the submount wafer is greater than the maximum effective thickness of the submount wafer, determining a pitch, depth, and width of a plurality of slots to be formed in the submount wafer. - View Dependent Claims (14, 15, 16, 17)
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Specification