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Semiconductor Device with Improved Light Propagation

  • US 20170207367A1
  • Filed: 01/18/2017
  • Published: 07/20/2017
  • Est. Priority Date: 01/18/2016
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a layer transparent to radiation having a target wavelength, wherein radiation of the target wavelength enters the transparent layer through a first side and exits the transparent layer through a second side, and wherein the second side comprises a profiled surface, the profiled surface including a plurality of vacancies fabricated in the material of the layer, wherein each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength.

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