Semiconductor Device with Improved Light Propagation
First Claim
1. A semiconductor structure comprising:
- a layer transparent to radiation having a target wavelength, wherein radiation of the target wavelength enters the transparent layer through a first side and exits the transparent layer through a second side, and wherein the second side comprises a profiled surface, the profiled surface including a plurality of vacancies fabricated in the material of the layer, wherein each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength.
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Abstract
A semiconductor structure for use in fabricating a semiconductor device having improved light propagation is provided. The structure includes at least one layer transparent to radiation having a target wavelength relevant to operation of the semiconductor device. During operation of the semiconductor device, radiation of the target wavelength enters the transparent layer through a first side and exits the transparent layer through a second side. At least one of the first side or the second side comprises a profiled surface. The profiled surface includes a plurality of vacancies fabricated in the material of the layer. Each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength.
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Citations
20 Claims
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1. A semiconductor structure comprising:
a layer transparent to radiation having a target wavelength, wherein radiation of the target wavelength enters the transparent layer through a first side and exits the transparent layer through a second side, and wherein the second side comprises a profiled surface, the profiled surface including a plurality of vacancies fabricated in the material of the layer, wherein each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength. - View Dependent Claims (2, 3, 4, 5, 7, 8, 9, 10)
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6. The structure 1, wherein each of the plurality of vacancies has a length and a width smaller than a depth.
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11. An optoelectronic device comprising:
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an active region configured to operate in relation to electromagnetic radiation having a target wavelength; and a transparent layer located adjacent to the active region, wherein radiation of the target wavelength enters the transparent layer through a first side and exits the transparent layer through a second side during operation of the optoelectronic device, and wherein the second side comprises a profiled surface, the profiled surface including a plurality of vacancies fabricated in the material of the transparent layer, wherein each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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19. An emitting device comprising:
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a sapphire substrate; a buffer layer located on a first side of the sapphire substrate; and an active region located on the buffer layer, wherein the active region is configured to emit electromagnetic radiation having a target wavelength, wherein the radiation of the target wavelength enters the sapphire substrate through the first side and exits the sapphire substrate through a second side opposite the first side during operation of the emitting device, and wherein the second side comprises a profiled surface, the profiled surface including a plurality of vacancies fabricated in the material of the transparent layer, wherein each vacancy comprises side walls configured for at least partial diffusive scattering of the radiation of the target wavelength. - View Dependent Claims (20)
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Specification