SEMICONDUCTOR DEVICE

• US 20170213779A1
• Filed: 08/08/2016
• Published: 07/27/2017
• Est. Priority Date: 01/26/2016
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: ISHIYAMA, Yusuke, IMOTO, Yuji
• Granted Patent: US 9,888,617 B2
• Time in Patent Office: Days
• CPC Class Codes: H01H 9/52 Cooling of switch parts cooling of contacts H01H1/62
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/4006 with bolts or screws
• CPC Class Codes: H01L 23/4012 for stacked arrangements of a plurality of semiconductor devices assemblies per se H01L25/00
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H05K 7/1432 specially adapted for power drive units or power converters
• CPC Class Codes: H05K 7/20927 Liquid coolant without phase change

Abstract

Provided is a semiconductor device having a small footprint, where the semiconductor device includes multiple power modules and a cooling structure for these power modules. The semiconductor device includes: a first power module on a first top plate of a coolant jacket; and a second power module on a second top plate of the coolant jacket, where the second top plate face the first top plate. The coolant jacket includes a first fin in contact with the first top plate in a passage, and a second fin in contact with the second top plate in the passage. The power modules face each other through the top plates and the fins.

Claims

1. A semiconductor device comprising:

a coolant jacket comprising a passage through which a coolant flows inside said coolant jacket;

a first power module mounted on a first-surface member of said coolant jacket; and

a second power module mounted on a second-surface member of said coolant jacket, said second-surface member facing said first-surface member,

wherein said coolant jacket comprises;

a first fin in contact with said first-surface member in said passage;

a second fin in contact with said second-surface member in said passage;

an intake opening through which said coolant is taken in from an outside;

an intake header configured to send said coolant entering from said intake opening to said first fin and said second fin;

a discharge opening through which said coolant is discharged to said outside; and

a discharge header configured to send, to said discharge opening, said coolant passing through said first fin and said second fin, and

wherein said first power module and said second power module face each other through said first-surface member and said second-surface member, and through said first fin and said second fin.

2. The semiconductor device according to claim 1, wherein said coolant jacket further comprises a partition plate partitioning said first fin and said second fin in said passage.

3. The semiconductor device according to claim 1, wherein said intake header and said discharge header are disposed between said first fin and said second fin.

4. The semiconductor device according to claim 1, further comprising a third power module mounted on a third-surface member of said coolant jacket, said third-surface member coupling together an end of said first-surface member and an end of said second-surface member,

wherein said coolant jacket comprises a third fin in contact with said third-surface member in said passage.

5. The semiconductor device according to claim 4, wherein said discharge header is configured to send, to said discharge opening, said coolant passing through said first fin and said second fin, followed by said third fin.

6. The semiconductor device according to claim 1, wherein said first fin and said second fin are alternately arranged along said passage.

7. The semiconductor device according to claim 6,

wherein said first fin is fitted in said second-surface member, and

wherein said second fin is fitted in said first-surface member.

8. The semiconductor device according to claim 1, wherein said first power module and said second power module each comprise a semiconductor element comprising a wide bandgap power semiconductor element.