Frequency- and Amplitude-Modulated Narrow-Band Infrared Emitters
First Claim
1. An infrared (IR) emission device, comprising:
- a plurality of fabricated nano-scale polaritonic material structures arranged on a substrate, the polaritonic material structures comprising at least one ferroelectric material;
an electrical power source configured to induce a strain in the ferroelectric material; and
a heater configured to apply heat to at least one of the polaritonic material structures;
wherein heat from the heater causes the at least one polaritonic material structure to produce an IR emission; and
wherein a predetermined wavelength, a predetermined linewidth, or a predetermined amplitude of the IR emission from the at least one polaritonic material structure can be obtained by an application of a predetermined electrical bias from the electrical power source to the ferroelectric material.
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Accused Products
Abstract
IR emission devices comprising an array of polaritonic IR emitters arranged on a substrate, where the emitters are coupled to a heater configured to provide heat to one or more of the emitters. When the emitters are heated, they produce an infrared emission that can be polarized and whose spectral emission range, emission wavelength, and/or emission linewidth can be tuned by the polaritonic material used to form the elements of the array and/or by the size and/or shape of the emitters. The IR emission can be modulated by the induction of a strain into a ferroelectric, a change in the crystalline phase of a phase change material and/or by quickly applying and dissipating heat applied to the polaritonic nanostructure. The IR emission can be designed to be hidden in the thermal background so that it can be observed only under the appropriate filtering and/or demodulation conditions.
12 Citations
30 Claims
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1. An infrared (IR) emission device, comprising:
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a plurality of fabricated nano-scale polaritonic material structures arranged on a substrate, the polaritonic material structures comprising at least one ferroelectric material; an electrical power source configured to induce a strain in the ferroelectric material; and a heater configured to apply heat to at least one of the polaritonic material structures; wherein heat from the heater causes the at least one polaritonic material structure to produce an IR emission; and wherein a predetermined wavelength, a predetermined linewidth, or a predetermined amplitude of the IR emission from the at least one polaritonic material structure can be obtained by an application of a predetermined electrical bias from the electrical power source to the ferroelectric material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An infrared (IR) emission device, comprising:
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a plurality of fabricated nano-scale polaritonic material structures arranged on a substrate, the one polaritonic material structures comprising at least one phase change material; and a heater configured to apply heat to at least one of the polaritonic material structures; wherein heat from the heater causes the at least one polaritonic material structure to produce an IR emission; and wherein a predetermined wavelength, a predetermined linewidth, or a predetermined amplitude of the IR emission from the at least one polaritonic material structure can be obtained by changing the local dielectric function of the phase change material in a predetermined manner. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. An infrared (IR) emission device, comprising:
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a plurality of fabricated nano-scale polaritonic material structures arranged on a substrate, at least some of the polaritonic material structures being coated with a thermal dissipation material layer; and a heater configured to apply heat to at least one of the polaritonic material structures; wherein heat from the heater causes the at least one polaritonic material structure to produce an IR emission; and wherein a predetermined amplitude, a predetermined wavelength, or a predetermined linewidth of the IR emission from the at least one polaritonic material structure can be obtained by selectively applying heat to and removing heat from the at least one polaritonic material structure. - View Dependent Claims (23, 24)
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25. An infrared (IR) emission device, comprising:
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a plurality of fabricated polaritonic material structures arranged on a thermal dissipation layer; and a heater configured to apply heat to at least one of the polaritonic material structures; wherein heat from the heater causes the at least one polaritonic material structure to produce an IR emission; and wherein at least one of a predetermined amplitude, a predetermined wavelength, and a predetermined linewidth of the IR emission can be obtained by selectively applying heat to and removing heat from the at least one polaritonic material structure. - View Dependent Claims (26, 27)
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28. An infrared (IR) emission device, comprising:
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a first plurality of fabricated nano-scale first polaritonic material structures arranged on a substrate, the first polaritonic material structures comprising at least one ferroelectric material; and a second plurality of fabricated nano-scale second polaritonic material structures arranged on the substrate, the second polaritonic material structures comprising at least one phase change material; an electrical power source configured to induce a strain in the ferroelectric material; and a heater configured to apply heat to at least one of the first and second polaritonic material structures; wherein heat from the heater causes the at least one polaritonic material structure to produce an IR emission; and wherein a predetermined spatially varying wavelength, a linewidth, or amplitude of the IR emission can be obtained by an application of a predetermined electrical bias from the electrical power source to a predetermined plurality of the first and/or second polaritonic material structures. - View Dependent Claims (29, 30)
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Specification