EPITAXIAL GROWTH METHODS AND STRUCTURES THEREOF
First Claim
1. A method of semiconductor device fabrication, comprising:
- loading a semiconductor wafer into a processing chamber;
while the semiconductor wafer is loaded within the processing chamber, performing a first pre-epitaxial layer deposition baking process at a first pressure and first temperature;
after the first pre-epitaxial layer deposition baking process, performing a second pre-epitaxial layer deposition baking process at a second pressure and second temperature, wherein the second pressure is different than the first pressure; and
after the second pre-epitaxial layer deposition baking process, introducing, while at a growth temperature, a precursor gas into the processing chamber to deposit an epitaxial layer over the semiconductor wafer.
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Abstract
A method and structure for providing a two-step defect reduction bake, followed by a high-temperature epitaxial layer growth. In various embodiments, a semiconductor wafer is loaded into a processing chamber. While the semiconductor wafer is loaded within the processing chamber, a first pre-epitaxial layer deposition baking process is performed at a first pressure and first temperature. In some cases, after the first pre-epitaxial layer deposition baking process, a second pre-epitaxial layer deposition baking process is then performed at a second pressure and second temperature. In some embodiments, the second pressure is different than the first pressure. By way of example, after the second pre-epitaxial layer deposition baking process and while at a growth temperature, a precursor gas may then be introduced into the processing chamber to deposit an epitaxial layer over the semiconductor wafer.
14 Citations
20 Claims
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1. A method of semiconductor device fabrication, comprising:
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loading a semiconductor wafer into a processing chamber; while the semiconductor wafer is loaded within the processing chamber, performing a first pre-epitaxial layer deposition baking process at a first pressure and first temperature; after the first pre-epitaxial layer deposition baking process, performing a second pre-epitaxial layer deposition baking process at a second pressure and second temperature, wherein the second pressure is different than the first pressure; and after the second pre-epitaxial layer deposition baking process, introducing, while at a growth temperature, a precursor gas into the processing chamber to deposit an epitaxial layer over the semiconductor wafer. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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2. The method of claim 2, wherein the epitaxial layer includes a silicon epitaxial layer.
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13. A method of semiconductor device fabrication, comprising:
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prior to deposition of an epitaxial layer, performing a two-step baking process of a semiconductor wafer within a processing chamber; and after the performing the two-step baking process, depositing the epitaxial layer over the semiconductor wafer; wherein the two-step baking process includes a first baking step performed at a first pressure and a second baking step performed at a second pressure different than the first pressure, and wherein the first baking step removes a first contaminant and the second baking step removes a second contaminant. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method of semiconductor device fabrication, comprising:
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loading a semiconductor wafer into a processing chamber; performing a first purge of the processing chamber and ramping a processing chamber temperature up to a first baking temperature; after the first purge, performing a first baking process in a hydrogen gas (H2) ambient at a first baking pressure and at the first baking temperature, wherein the first baking process removes carbon contamination; subsequent to the first baking process, performing a second baking process in the hydrogen gas (H2) ambient at a second baking pressure and at a second baking temperature, wherein the second baking pressure is less than the first baking pressure, and wherein the second baking process removes oxygen contamination; after the second baking process, depositing an epitaxial layer over the semiconductor wafer by flowing silane (SiH4) and hydrogen chloride (HCl) gas over the semiconductor wafer at a growth pressure and at a growth temperature; and following the depositing the epitaxial layer, performing a second purge of the processing chamber and ramping the processing chamber temperature down to room temperature. - View Dependent Claims (20)
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Specification