E-BOOK READER
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Accused Products
Abstract
An e-book reader including a display panel having a thin film transistor with stable electrical characteristics is provided. Alternatively, an e-book reader capable of holding images for a long time is provided. Alternatively, a high-resolution e-book reader is provided. Alternatively, an e-book reader with low power consumption is provided. Display on the display panel of the e-book reader is controlled by a thin film transistor whose channel formation region is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor by removal of an impurity that might be an electron donor in the oxide semiconductor and has a larger energy gap than a silicon semiconductor.
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Citations
9 Claims
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1. (canceled)
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2. A semiconductor device comprising:
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a gate electrode; a first gate insulating film containing silicon and nitrogen over the gate electrode; a second gate insulating film containing silicon and oxygen over the first gate insulating film; an oxide semiconductor film containing indium, gallium and zinc over the second gate insulating film; a source electrode and a drain electrode over the oxide semiconductor film; an oxide insulating film over the oxide semiconductor film, the source electrode and the drain electrode; a protective insulating film containing silicon and nitrogen; a planarization insulating film over the protective insulating film; and a pixel electrode over the planarization insulating film, wherein the oxide insulating film has a region in contact with the oxide semiconductor film. - View Dependent Claims (3, 4, 5)
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6. A semiconductor device comprising:
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a gate electrode; a first gate insulating film containing silicon and nitrogen over the gate electrode; a second gate insulating film containing silicon and oxygen over the first gate insulating film; an oxide semiconductor film containing indium, gallium and zinc over the second gate insulating film; a source electrode and a drain electrode over the oxide semiconductor film; an oxide insulating film over the oxide semiconductor film, the source electrode and the drain electrode; a protective insulating film containing silicon and nitrogen; a planarization insulating film over the protective insulating film; and a pixel electrode over the planarization insulating film, wherein the oxide insulating film has a region in contact with the oxide semiconductor film, and wherein the pixel electrode is electrically connected to a transistor including the oxide semiconductor film, and an off-state current of the transistor is 1×
10−
13 A or less. - View Dependent Claims (7, 8, 9)
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Specification