COPOLAR INTEGRATED DIODE

• US 20170221986A1
• Filed: 07/15/2016
• Published: 08/03/2017
• Est. Priority Date: 01/28/2016
• Status: Abandoned Application

• Current Assignee: Jiaxing Aihe Electronics Co., Ltd.
• Original Assignee: Jiaxing Aihe Electronics Co., Ltd.
• Inventors: Wei, Tao, Ho, Richard Morgan
• Application Number:
  US15/211,824
• Publication Number:
  US 20170221986A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/0814 Diodes only
• CPC Class Codes: H01L 29/063 Reduced surface field [RESURF] pn-junction structures
• CPC Class Codes: H01L 29/0649 Dielectric regions, e.g. SiO2 regions, air gaps
• CPC Class Codes: H01L 29/417 carrying the current to be rectified, amplified or switched
• CPC Class Codes: H01L 29/8611 Planar PN junction diodes
• CPC Class Codes: H01L 2924/12036 PN diode

Abstract

The present invention belongs to the technical field of semiconductors and discloses a copolar integrated diode, including a plurality of diode structures sharing anodes or cathodes. The copolar integrated diode comprises a semiconductor substrate; a low-doped drift region is doped on the semiconductor substrate; two or more electrodes are connected to the low-doped drift region; wherein, between the low-doped drift region and the semiconductor substrate or in the case of forming a PN junction in the low-doped drift region, the distances from the two or more electrodes to the PN junction of the diode structure are different. The present invention provides an integrated structure of a plurality of diodes, which is low in space occupancy and high in security.

Claims

1. A copolar integrated diode, which is an integrated structure of a plurality of common-anode diodes or a plurality of common-cathode diodes;

wherein the copolar integrated diode comprises a semiconductor substrate;

a low-doped drift region is doped on the semiconductor substrate;

two or more electrodes are connected to the low-doped drift region;

wherein a PN junction is formed between the low-doped drift region and the semiconductor substrate, and wherein distances from the two or more electrodes to the PN junction are different for each of the two or more electrodes; and

wherein the semiconductor substrate is one of;

an anode and the two or more electrodes are cathodes to constitute two or more common-anode diodes with different breakdown voltages;

or

a cathode and the two or more electrodes are anodes to constitute two or more common-cathode diodes with different breakdown voltages.

2. The copolar integrated diode of claim 1, wherein the low-doped drift region is an N-type low-doped drift region;

a heavily doped P-type region is arranged in the N-type low-doped drift region;

a doping concentration of the heavily doped P-type region is higher than a doping concentration of the N-type low-doped drift region by at least one order of magnitude; and

wherein the heavily doped P-type region constitutes the anode and the two or more electrodes are the cathodes of the two or more common-anode diodes with different breakdown voltages.

3. The copolar integrated diode of claim 2, wherein at least two heavily doped N-type contact regions are arranged in the N-type low-doped drift region;

a doping concentration of the at least two heavily doped N-type contact regions is higher than the doping concentration of the N-type low-doped drift region by at least one order of magnitude; and

wherein, the at least two heavily doped N-type contact regions constitute the cathodes, and the two or more electrodes are connected with the at least two heavily doped N-type contact regions and constitute the two or more common-anode diodes with different breakdown voltages together with the heavily doped P-type region as the anode, the anode being a common anode for the two or more common-anode diodes.

4. The copolar integrated diode of claim 3, wherein insulating isolation layers are arranged between any adjacent heavily doped P-type regions and the at least two heavily doped N-type contact regions and between any adjacent heavily doped N-type contact regions;

and

wherein, the insulating isolation layers are made of an insulating isolation material, and a depth of the insulating isolation layers is larger than depths of the heavily doped P-type region and the at least two heavily doped N-type contact regions.

5. The copolar integrated diode of claim 1, wherein the low-doped drift region is a P-type low-doped drift region;

a heavily doped N-type region is arranged in the P-type low-doped drift region;

a doping concentration of the heavily doped N-type region is higher than a doping concentration of the P-type low-doped drift region for at least one order of magnitude; and

wherein the heavily doped N-type region constitutes the cathode and the two or more electrodes are the anodes of the two or more common-cathode diodes with different breakdown voltages.

6. The copolar integrated diode of claim 5, wherein at least two heavily doped P-type contact regions are arranged in the P-type low-doped drift region;

a doping concentration of the at least two heavily doped P-type contact regions is higher than the doping concentration of the P-type low-doped drift region for at least one order of magnitude; and

wherein the at least two heavily doped P-type contact regions constitute the anodes and the two or more electrodes are connected with the at least two heavily doped P-type contact regions and constitute the two or more common-cathode diodes with different breakdown voltages together with the heavily doped N-type region as the cathode, the cathode being a common cathode for the two or more common-cathode diodes.

7. The copolar integrated diode of claim 6, wherein insulating isolation layers are arranged between any adjacent heavily doped N-type regions and the at least two heavily doped P-type contact regions and between any adjacent heavily doped P-type contact regions;

and

wherein, the insulating isolation layers are made of an insulating isolation material, and a depth of the insulating isolation layers is larger than depths of the heavily doped N-type region and the at least two heavily doped P-type contact regions.

8. The copolar integrated diode of claim 1, wherein the semiconductor substrate is P-type doped, the low-doped drift region is N-type doped, and the PN junction is formed therebetween;

two or more heavily doped N-type contact regions are arranged in the low-doped drift region; and

wherein, the two or more heavily doped N-type contact regions serve as the cathodes and are respectively connected with the two or more electrodes to constitute a plurality of integrated common-anode diodes together with the semiconductor substrate serving as the anode.

9. The copolar integrated diode of claim 1, wherein the semiconductor substrate is N-type doped, the low-doped drift region is P-type doped, and the PN junction is formed therebetween;

two or more heavily doped P-type contact regions are arranged in the low-doped drift region; and

wherein the two or more heavily doped P-type contact regions serve as the anodes and are respectively connected with the two or more electrodes to constitute a plurality of integrated common-cathode diodes together with the semiconductor substrate serving as the cathode.

10. The copolar integrated diode of claim 8, wherein an insulating isolation layer is arranged between any adjacent heavily doped N-type contact regions of the two or more heavily doped N-type contact regions;

and

wherein, the insulating isolation layer is made of an insulating isolation material, and a depth of the insulating isolation layer is larger than a depth of the at least two heavily doped N-type contact regions.

11. The copolar integrated diode of claim 9, wherein an insulating isolation layer is arranged between any adjacent heavily doped P-type contact regions of the two or more heavily doped P-type contact regions;

and

wherein, the insulating isolation layer is made of an insulating isolation material, and a depth of the insulating isolation layer is larger than a depth of the at least two heavily doped P-type contact regions.