SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
First Claim
1. A semiconductor device, comprising:
- a first wire pattern on a substrate, the first wire pattern isolated from the substrate;
a gate electrode surrounding and intersecting the first wire pattern;
a semiconductor pattern on at least two sides of the first wire pattern, the semiconductor pattern including a first part, the first part overlaps the first wire pattern;
a gate insulating layer between the gate electrode and the first wire pattern, and the gate insulating layer surrounding the first wire pattern; and
a first spacer between the first wire pattern and the substrate, and the first spacer between the gate insulating layer and the semiconductor pattern.
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Accused Products
Abstract
A semiconductor device includes at least a first wire pattern, a gate electrode, a semiconductor pattern, a gate insulating layer, and a first spacer. The first wire pattern is on a substrate and isolated from the substrate. The gate electrode surrounds and intersects the first wire pattern. The semiconductor pattern is on both sides of the first wire pattern, and the semiconductor pattern includes a portion which overlaps the first wire pattern. The gate insulating layer is disposed between the gate electrode and the first wire pattern, and the gate insulating layer surrounds the first wire pattern. The first spacer is between the first wire pattern and the substrate, and the first spacer is between the gate insulating layer and the semiconductor pattern
54 Citations
20 Claims
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1. A semiconductor device, comprising:
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a first wire pattern on a substrate, the first wire pattern isolated from the substrate; a gate electrode surrounding and intersecting the first wire pattern; a semiconductor pattern on at least two sides of the first wire pattern, the semiconductor pattern including a first part, the first part overlaps the first wire pattern; a gate insulating layer between the gate electrode and the first wire pattern, and the gate insulating layer surrounding the first wire pattern; and a first spacer between the first wire pattern and the substrate, and the first spacer between the gate insulating layer and the semiconductor pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device, comprising:
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a first wire pattern on a substrate, the first wire pattern isolated from the substrate; a gate electrode surrounding and intersecting the first wire pattern; a semiconductor pattern on at least two sides of the first wire pattern; a gate insulating layer between the gate electrode and the first wire pattern, and the gate insulating layer surrounding the first wire pattern; and a first spacer between the first wire pattern and the substrate, the first spacer between the gate insulating layer and the semiconductor pattern, and the first spacer including first and second sidewalls, the first and second sidewalls extend from the first wire pattern toward the substrate, wherein at least one of the first and second sidewalls is convex with respect to the gate electrode. - View Dependent Claims (13, 14, 15)
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16. A semiconductor device, comprising:
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a wire pattern on a substrate, the wire pattern isolated from the substrate; a gate electrode surrounding and intersecting the wire pattern; a semiconductor pattern on first and second sides of the wire pattern; a gate insulating layer between the gate electrode and the wire pattern; and a spacer on the second side of the wire pattern, the spacer between the semiconductor pattern and the gate insulating layer. - View Dependent Claims (17, 18, 19, 20)
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Specification