METHOD OF FABRICATING FIN FIELD EFFECT TRANSISTOR
First Claim
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1. A method of fabricating a fin field effect transistor (finFET), comprising:
- forming an interfacial layer on a fin structure;
forming a high-k dielectric layer on the interfacial layer;
forming a stress film on the high-k dielectric layer;
performing an annealing process on the stress film; and
performing an etching process to remove the stress film.
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Abstract
The present invention provides a method of fabricating a fin field effect transistor (finFET), comprising: firstly, an interfacial layer is formed on a fin structure, next, a high-k dielectric layer is formed on the interfacial layer; afterwards, a stress film is formed on the high-k dielectric layer, an annealing process is then performed to the stress film, and an etching process is performed to remove the stress film.
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Citations
18 Claims
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1. A method of fabricating a fin field effect transistor (finFET), comprising:
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forming an interfacial layer on a fin structure; forming a high-k dielectric layer on the interfacial layer; forming a stress film on the high-k dielectric layer; performing an annealing process on the stress film; and performing an etching process to remove the stress film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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