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METHOD OF FABRICATING FIN FIELD EFFECT TRANSISTOR

  • US 20170222026A1
  • Filed: 02/03/2016
  • Published: 08/03/2017
  • Est. Priority Date: 02/03/2016
  • Status: Abandoned Application
First Claim
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1. A method of fabricating a fin field effect transistor (finFET), comprising:

  • forming an interfacial layer on a fin structure;

    forming a high-k dielectric layer on the interfacial layer;

    forming a stress film on the high-k dielectric layer;

    performing an annealing process on the stress film; and

    performing an etching process to remove the stress film.

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