OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCING THE SAME
2 Assignments
0 Petitions
Accused Products
Abstract
An optoelectronic semiconductor chip includes a semiconductor layer sequence and a carrier substrate, wherein the semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active layer arranged between the first semiconductor region and the second semiconductor region, wherein the first semiconductor region faces the carrier substrate, the semiconductor layer sequence includes first recesses formed in the first semiconductor region and that do not separate the active layer, the semiconductor layer sequence includes second recesses that at least partially separate the first semiconductor region and the active layer, and the second recesses adjoin a first recess or are arranged between two first recesses.
-
Citations
33 Claims
-
1-15. -15. (canceled)
-
16. An optoelectronic semiconductor chip comprising a semiconductor layer sequence and a carrier substrate, wherein
the semiconductor layer sequence comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active layer arranged between the first semiconductor region and the second semiconductor region, wherein the first semiconductor region faces the carrier substrate, the semiconductor layer sequence comprises first recesses formed in the first semiconductor region and that do not separate the active layer, the semiconductor layer sequence comprises second recesses that at least partially separate the first semiconductor region and the active layer, and the second recesses adjoin a first recess or are arranged between two first recesses.
-
27. A method of producing an optoelectronic semiconductor chip, comprising:
-
applying a semiconductor layer sequence to a growth substrate, wherein the semiconductor layer sequence comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active layer arranged between the first semiconductor region and the second semiconductor region, wherein the second semiconductor region faces the growth substrate, forming first recesses in the first semiconductor region by a first etching process, wherein the first recesses do not separate the active layer, forming second recesses that separate the active layer by a second etching process, wherein the second recesses adjoin a first recess or are arranged between two first recesses, and wherein the first recesses and the second recesses comprise oblique side surfaces, connecting the semiconductor layer sequence with a carrier substrate such that the recesses face the carrier substrate, and removing the growth substrate. - View Dependent Claims (28, 29, 30, 31)
-
-
32. An optoelectronic semiconductor chip comprising a semiconductor layer sequence and a carrier substrate, wherein
the semiconductor layer sequence comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active layer arranged between the first semiconductor region and the second semiconductor region, wherein the first semiconductor region faces the carrier substrate, the semiconductor layer sequence comprises first recesses formed in the first semiconductor region and that do not separate the active layer, the semiconductor layer sequence comprises second recesses that at least partially separate the first semiconductor region and the active layer, the second recesses adjoin a first recess or are arranged between two first recesses, and the first recesses and the second recesses comprise oblique side surfaces.
Specification