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SEMICONDUCTOR INTEGRATED CIRCUIT

  • US 20170229457A1
  • Filed: 08/25/2016
  • Published: 08/10/2017
  • Est. Priority Date: 02/04/2016
  • Status: Active Grant
First Claim
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1. A semiconductor integrated circuit, comprising:

  • a first transistor comprising a first impurity region of a first conductivity type in a first well region of a conductivity type opposite the first conductivity type, a second impurity region of the first conductivity type in the first well, and a first gate electrode on the first well region between the first and second impurity regions, the first impurity region being electrically connected to a first power line;

    a second transistor comprising a third impurity region of a second conductivity type in a second well region of a conductivity type opposite the second conductivity type, a fourth impurity region of the second conductivity type in the second well, a second gate electrode on the second well region between the third and fourth impurity regions, the second gate electrode being electrically connected to the first gate electrode, and the third and fourth impurity regions being electrically connected to a second power line; and

    a resistance element comprising a first end electrically connected to the first and second gate electrodes, a second end electrically connected to the second power line, and a resistive electrical path between the first and second ends including a portion of the third impurity region.

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