PROCESS FOR THE GENERATION OF THIN INORGANIC FILMS

• US 20170233865A1
• Filed: 07/24/2015
• Published: 08/17/2017
• Est. Priority Date: 08/04/2014
• Status: Active Grant

• Current Assignee: BASF SE
• Original Assignee: BASF SE
• Inventors: STRAUTMANN, Julia, PACIELLO, Rocco, SCHAUB, Thomas, SCHIERLE-ARNDT, Kerstin, LOEFFLER, Daniel, BLASBERG, Florian, LIMBURG, Carolin, WILMER, Hagen, EICKEMEYER, Felix
• Granted Patent: US 10,106,888 B2
• Time in Patent Office: Days
• CPC Class Codes: C23C 16/18 from metallo-organic compounds
• CPC Class Codes: C23C 16/45553 characterized by the use of precursors specially adapted for ALD

Abstract

The present invention is in the field of processes for the generation of thin inorganic films on substrates. More specifically, the present invention relates to a process comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate, wherein R¹¹, R¹², R¹³, R¹⁴, R¹⁵, R¹⁶, R¹⁷, R¹⁸ are independent of each other hydrogen, an alkyl group, an aryl group, or a trialkylsilyl group, R²¹, R²², R²³, R²⁴ are independent of each other an alkyl group, an aryl group, or a trialkylsilyl group, n is 1 or 2, M is a metal or semimetal, X is a ligand which coordinates M, and m is an integer from 0 to 3.

Claims

1. :

A process, comprising bringing a compound of general formula (I) into the gaseous or aerosol state and depositing the compound of general formula (I) from the gaseous or aerosol state onto a solid substrate;

2. :

The process according to claim 1, wherein the compound of general formula (I) is chemisorbed on the surface of the solid substrate.

3. :

The process according to claim 1, wherein the deposited compound of general formula (I) is decomposed by removal of all ligands L and X.

4. :

The process according to claim 3, wherein the deposited compound of general formula (I) is exposed to a reducing agent.

5. :

The process according to claim 3, wherein the sequence of depositing the compound of general formula (I) onto a solid substrate and decomposing the deposited compound of general formula (I) is performed at least twice.

6. :

The process according to claim 5, wherein one sequence of the process takes from 0.1 second to 1 minute.

7. :

The process according to claim 1, wherein the temperature of the solid substrate is from 100 to 300°

C.

8. :

The process according to claim 1, wherein the compound of general formula (I) is mixed with an inert gas before being deposited onto the solid substrate.

9. :

The process according to claim 1, wherein the pressure at deposition is 1 to 0.01 mbar.

10. :

The process according to claim 1, wherein M is Ni or Co.

11. :

The process according to claim 1, wherein R¹¹, R¹², R¹³, R¹⁴, R¹⁵, R¹⁶, R¹⁷, and R¹⁸ are hydrogen.

12. :

The process according to claim 1, wherein R²¹, R²², R²³, and R²⁴ are independent of each other alkyl groups.

13. :

A process of film formation, the process comprising depositing the compound of general formula (I) onto the solid substrate as a film;