CHAMBER MEMEBER OF A PLASMA SOURCE AND PEDESTAL WITH RADIALLY OUTWARD POSITIONED LIFT PINS FOR TRANSLATION OF A SUBSTRATE C-RING

• US 20170236688A1
• Filed: 02/09/2017
• Published: 08/17/2017
• Est. Priority Date: 02/12/2016
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Angelov, Ivelin, Treadwell, Jason Lee, Park, Joon Hong, Lai, Canfeng, Caron, James Eugene
• Granted Patent: US 10,699,878 B2
• Time in Patent Office: Days
• CPC Class Codes: H01J 2237/334 Etching
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32458 Vessel
• CPC Class Codes: H01J 37/32532 Electrodes
• CPC Class Codes: H01J 37/32651 Shields, e.g. dark space shields, Faraday shields
• CPC Class Codes: H01J 37/32715 Workpiece holder
• CPC Class Codes: H01J 37/32724 Temperature

Abstract

A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.

Claims

1. A chamber member of a plasma source comprising:

a sidewall surrounding an upper region of a substrate processing chamber, wherein the sidewall is cylindrically-shaped;

a transition member connected to the sidewall;

a top wall connected to the transition member; and

an injector connecting member connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector, wherein gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber,

wherein at least one of

a center height to low inner diameter ratio of the chamber member is 0.25-0.5, or

a center height to outer height ratio of the chamber member is 0.4-0.85.

2. The chamber member of claim 1, wherein the top wall is semi-linear shaped.

3. The chamber member of claim 1, wherein the top wall is linear shaped.

4. The chamber member of claim 1, wherein the center height to low inner diameter ratio of the chamber member is 0.35-0.45.

5. The chamber member of claim 1, wherein the center height to outer height ratio of the chamber member is 0.5-0.6.

6. A plasma source comprising:

the chamber member of claim 1;

a first coil disposed above a center portion of the chamber member and around the injector connecting member; and

a second coil disposed around the sidewall.

7. The plasma source of claim 6, wherein the first coil and the second coil are connected in series.

8. The plasma source of claim 6, wherein the first coil and the second coil are connected in parallel.

9. The plasma source of claim 6, further comprising:

a generator supplying current to the first coil and the second coil; and

a controller configured to control the supply of current to the first coil and the second coil, wherein current supplied to the first coil is controlled independently of current supplied to the second coil.

10. The plasma source of claim 6 further comprising a diffuser configured to spread gases in the upper region of the substrate processing chamber.

11. The plasma source of claim 10, wherein:

the diffuser includes a plurality of channels; and

the plurality of channels receive respective gases.

12. A substrate processing chamber comprising:

the chamber member of claim 1; and

a second injector that injects gas upward and into the substrate processing chamber.

13. A substrate processing chamber comprising:

the chamber member of claim 1; and

a second injector that injects gas downward, below a distribution plate or showerhead, and into a substrate processing chamber.

14. A substrate processing chamber comprising:

the chamber member of claim 1;

a distribution plate; and

a second injector that injects gas through the distribution plate and into the substrate processing chamber.

15. A substrate processing system comprising:

the chamber member of claim 1;

a plasma source comprising the chamber member;

a plurality of radio frequency components including a capacitance;

aground shield; and

a protective enclosure,

wherein

the plasma source, the plurality of radio frequency components and the ground shield are disposed within the protective enclosure, and

the ground shield separates the radio frequency components from the plasma source.

16. The substrate processing system of claim 15, wherein the protective enclosure comprises:

a top wall;

insulators connected to the top wall of the protective enclosure;

pins that pass through the insulators; and

a controller that connects to the pins and supplies current to the plurality of radio frequency components.

17. The substrate processing system of claim 15, further comprising a pedestal, wherein the pedestal comprises:

a radio frequency electrode;

a plurality of lift pins that are located radially outside the radio frequency electrode; and

a c-ring that receives a substrate, wherein the plurality of lift pins move the c-ring relative to the pedestal.

18. A pedestal comprising:

a radio frequency electrode;

a plurality of lift pins that are located radially outside the radio frequency electrode;

a c-ring that receives a substrate, wherein the plurality of lift pins move the c-ring relative to the pedestal;

a plurality of insulators; and

a ground shield, wherein the radio frequency electrode, the lift pins, and the plurality of insulators are disposed in the ground shield,

wherein the plurality of insulators isolate the radio frequency electrode from the lift pins and the ground shield.

19. The pedestal of claim 18, wherein the c-ring comprises a tapered or stepped inner surface on which the substrate is held.

20. A substrate processing system comprising:

the pedestal of claim 18; and

a plasma source disposed above the pedestal and generating plasma to etch the substrate.