SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

• US 20170236849A1
• Filed: 05/02/2017
• Published: 08/17/2017
• Est. Priority Date: 12/28/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: ENDO, Yuta
• Granted Patent: US 10,461,101 B2
• Time in Patent Office: Days
• CPC Class Codes: G02F 1/136236 using a grey or half tone lithographic process
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13685 Top gates
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 27/1288 employing particular masking sequences or specially adapted masks, e.g. half-tone mask
• CPC Class Codes: H01L 27/1296 adapted to increase the uniformity of device parameters
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor.

Claims

1. A semiconductor device comprising:

an oxide semiconductor layer over a first insulating film;

the oxide semiconductor layer comprising a first region and a second region;

a transistor over an insulating surface, the transistor including;

a source electrode layer and a drain electrode layer;

a second insulating film over the first region; and

a gate electrode layer over the first region with the second insulating film therebetween;

a transparent conductive film overlapping with the second region;

a dielectric between the second region and the transparent conductive film; and

a capacitor comprising

the second region;

the transparent conductive film; and

the dielectric serving as a dielectric of the capacitor.

2. The semiconductor device according to claim 1, wherein the dielectric is in direct contact with a first electrode of the capacitor and a second electrode of the capacitor.

3. The semiconductor device according to claim 1, further comprising a wiring,

wherein the wiring overlaps with the second region.

4. The semiconductor device according to claim 3, wherein the wiring overlaps with the transparent conductive film with the dielectric interposed therebetween.

5. The semiconductor device according to claim 3, wherein the source electrode layer, the drain electrode layer and the wiring are formed from a same layer.

6. The semiconductor device according to claim 1, wherein conductivity of t region is lower than conductivity of the second region.

7. The semiconductor device according to claim 1, further comprising:

a third insulating film over the second insulating film and the gate electrode layer; and

a fourth insulating film over the third insulating film,

wherein the third insulating film and the fourth insulating film overlap the second region, and

wherein the dielectric includes the third insulating film and the fourth insulating film.

8. The semiconductor device according to claim 7,

wherein the third insulating film has a single-layer structure or a layered structure including an oxide insulating material selected from silicon oxide, silicon oxynitride, aluminum oxide, hafnium oxide, gallium oxide, and a Ga—

Zn-based metal oxide.

9. The semiconductor device according to claim 7,

wherein the fourth insulating film has a single-layer structure or a layered structure including a nitride insulating material selected from silicon nitride oxide, silicon nitride, aluminum nitride, and aluminum nitride oxide.

10. The semiconductor device according to claim 1, further comprising:

a third insulating film over the second insulating film and the gate electrode layer, the third insulating film being in contact with the second region; and

a fourth insulating film over the third insulating film,

wherein the third insulating film and the fourth insulating film overlap the second region, and

wherein the dielectric includes the third insulating film and the fourth insulating film.

11. The semiconductor device according to claim 1, further comprising:

a third insulating film over the second insulating film and the gate electrode layer; and

a fourth insulating film over the third insulating film, the fourth insulating film being in contact with the second region,

wherein the fourth insulating film overlaps the second region, and

wherein the dielectric includes the fourth insulating film.

12. The semiconductor device according to claim 1, further comprising a nitride insulating film between the first insulating film and the second region, the nitride insulating film being in contact with the second region.

13. The semiconductor device according to claim 1,

wherein the second region and the oxide semiconductor layer include indium, zinc and gallium.

14. The semiconductor device according to claim 1,

wherein the second region includes one or more elements selected from hydrogen, boron, nitrogen, fluorine, aluminum, phosphorus, arsenic, indium, tin, antimony, and a rare gas element.

15. The semiconductor device according to claim 1,

wherein the oxide semiconductor layer has an energy gap of 2.0 eV or more.

16. The semiconductor device according to claim 1,

wherein the transparent conductive film is electrically connected to another one of the source electrode layer and the drain electrode layer.