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Methods of Manufacturing a Power MOSFET

  • US 20170236910A1
  • Filed: 05/02/2017
  • Published: 08/17/2017
  • Est. Priority Date: 07/14/2014
  • Status: Active Grant
First Claim
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1. A method of manufacturing a power metal oxide semiconductor field effect transistor, the method comprising:

  • forming a gate electrode in a gate trench in a main surface of a semiconductor substrate, the gate trench extending parallel to the main surface, the gate electrode comprising a gate electrode material, the gate electrode material comprising a metal; and

    forming a field electrode in a field plate trench in the main surface, the field plate trench having an extension length in a first direction which is less than double and more than half of an extension length of the field plate trench in a second direction perpendicular to the first direction, the first and the second directions being parallel to the main surface.

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