FINGERPRINT SENSOR AND MANUFACTURING METHOD THEREOF

• US 20170243798A1
• Filed: 05/10/2017
• Published: 08/24/2017
• Est. Priority Date: 05/12/2015
• Status: Active Grant

• Current Assignee: Amkor Technology Singapore Holding Pte., Ltd. (Amkor Technology Incorporated)
• Original Assignee: Amkor Technology Incorporated
• Inventors: Park, Sung Sun, Chung, Ji Young, Berry, Christopher
• Granted Patent: US 10,446,455 B2
• Time in Patent Office: Days
• CPC Class Codes: B81C 3/00 Assembling of devices or systems from individually processed components
• CPC Class Codes: G06V 40/13 Sensors therefor
• CPC Class Codes: G06V 40/1329 Protecting the fingerprint sensor against damage caused by the finger
• CPC Class Codes: H01L 2224/034 by blanket deposition of the material of the bonding area
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03452 Chemical vapour deposition [CVD], e.g. laser CVD
• CPC Class Codes: H01L 2224/03464 Electroless plating
• CPC Class Codes: H01L 2224/0347 using a lift-off mask
• CPC Class Codes: H01L 2224/0361 Physical or chemical etching
• CPC Class Codes: H01L 2224/03912 the bump being used as a mask for patterning the bonding area
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05666 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05671 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05684 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/1132 : Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/11334 : using preformed bumps
• CPC Class Codes: H01L 2224/114 : by blanket deposition of the material of the bump connector
• CPC Class Codes: H01L 2224/1146 : Plating
• CPC Class Codes: H01L 2224/1147 : using a lift-off mask
• CPC Class Codes: H01L 2224/11849 : Reflowing
• CPC Class Codes: H01L 2224/119 : Methods of manufacturing bump connectors involving a specific sequence of method steps
• CPC Class Codes: H01L 2224/13013 : being rectangular or square
• CPC Class Codes: H01L 2224/13014 : being circular or elliptic
• CPC Class Codes: H01L 2224/131 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13294 : with a principal constituent of the material being a liquid not provided for in groups H01L2224/132 - H01L2224/13291
• CPC Class Codes: H01L 2224/133 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/16225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 : the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/27312 : Continuous flow, e.g. using a microsyringe, a pump, a nozzle or extrusion
• CPC Class Codes: H01L 2224/2732 : Screen printing, i.e. using a stencil
• CPC Class Codes: H01L 2224/27622 : Photolithography
• CPC Class Codes: H01L 2224/2784 : involving a mechanical process, e.g. planarising the layer connector
• CPC Class Codes: H01L 2224/29006 : Layer connector larger than the underlying bonding area
• CPC Class Codes: H01L 2224/29007 : Layer connector smaller than the underlying bonding area
• CPC Class Codes: H01L 2224/29011 : comprising apertures or cavities
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29294 : with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
• CPC Class Codes: H01L 2224/29299 : Base material
• CPC Class Codes: H01L 2224/2939 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/33181 : On opposite sides of the body
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 : Bump and layer connectors
• CPC Class Codes: H01L 2224/81 : using a bump connector
• CPC Class Codes: H01L 2224/81191 : wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/81203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81424 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/81439 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/81444 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/81447 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/81455 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/8146 : Iron [Fe] as principal constituent
• CPC Class Codes: H01L 2224/81464 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/81466 : Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/81471 : Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/81484 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/8185 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/83101 : as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/83102 : using surface energy, e.g. capillary forces
• CPC Class Codes: H01L 2224/83192 : wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/9211 : Parallel connecting processes
• CPC Class Codes: H01L 2224/92125 : the second connecting process involving a layer connector
• CPC Class Codes: H01L 2224/92225 : the second connecting process involving a layer connector
• CPC Class Codes: H01L 23/053 : the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
• CPC Class Codes: H01L 23/3128 : the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/27 : Manufacturing methods
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/069 : Polyurethane
• CPC Class Codes: H01L 2924/07025 : Polyimide
• CPC Class Codes: H01L 2924/1815 : Shape
• CPC Class Codes: H01L 2924/18161 : of a flip chip

Abstract

A fingerprint sensor device and a method of making a fingerprint sensor device. As non-limiting examples, various aspects of this disclosure provide various fingerprint sensor devices, and methods of manufacturing thereof, that comprise a sensing area on a bottom side of a die without top side electrodes that senses fingerprints from the top side, and/or that comprise a sensor die directly electrically connected to conductive elements of a plate through which fingerprints are sensed.

Claims

1-20. -20. (canceled)

21. A fingerprint sensor device comprising:

a substrate having a top substrate side, a bottom substrate side, and lateral substrate sides between the top and bottom substrate sides;

a semiconductor die having a top die side, a bottom die side, and lateral die sides between the top and bottom die sides, wherein the semiconductor die operates to sense a fingerprint of a finger positioned above the top die side;

a plurality of conductive interconnection structures electrically connecting the bottom die side to the top substrate side; and

an encapsulating material surrounding at least the lateral die sides and covering at least a portion of the top substrate side.

22. The fingerprint sensor device of claim 21, wherein at least a portion of the top die side is exposed from a top side of the encapsulating material.

23. The fingerprint sensor device of claim 22, wherein the top die side is coplanar with the top side of the encapsulating material.

24. The fingerprint sensor device of claim 22, comprising a protective layer that directly contacts and covers said at least a portion of the top die side.

25. The fingerprint sensor device of claim 22, comprising a protective layer that directly contacts and covers the top die side and at least a portion of the top side of the encapsulating material.

26. The fingerprint sensor device of claim 21, wherein:

the bottom die side comprises bottom side electrical circuitry; and

the semiconductor die provides electrical signals corresponding to the finger above the top die side to the bottom side electrical circuitry.

27. The fingerprint sensor device of claim 26, wherein the bottom side electrical circuitry comprises a fingerprint sensing unit.

28. The fingerprint sensor device of claim 21, comprising:

a second semiconductor die; and

a plurality of second interconnection structures electrically connecting the second semiconductor die the top substrate side,

wherein the encapsulating material surrounds at least lateral sides of the second semiconductor die.

29. The fingerprint sensor device of claim 21, comprising an underfill material, different from the encapsulating material, between the semiconductor die and the substrate, wherein the encapsulating material directly contacts and laterally surrounds the underfill material.

30. The fingerprint sensor device of claim 21, wherein each of the lateral substrate sides is coplanar with a respective lateral side of the encapsulating material.

31. A fingerprint sensor device comprising:

a substrate having a top substrate side, a bottom substrate side, lateral substrate sides between the top and bottom substrate sides, and substrate interconnection structures on the top substrate side;

a semiconductor die having a top die side, a bottom die side, lateral die sides between the top and bottom die sides, and die interconnection structures on the bottom die side, wherein the semiconductor die comprises fingerprint sensing circuitry configured to sense a fingerprint of a finger positioned above the top die side;

a plurality of conductive interconnection structures, each electrically connecting a respective one of the die interconnection structures to a respective one of the substrate interconnection structures; and

an encapsulating material surrounding at least a portion of the lateral die sides and covering at least a portion of the top substrate side, wherein at least a portion of the top die side is not covered by the encapsulating material.

32. The fingerprint sensor device of claim 31, wherein the top die side is coplanar with a top side of the encapsulating material.

33. The fingerprint sensor device of claim 31, comprising a protection layer that directly contacts and covers the top die side and at least a portion of a top side of the encapsulating material.

34. The fingerprint sensor device of claim 31, wherein:

the bottom die side comprises bottom side electrical circuitry; and

the semiconductor die provides electrical signals corresponding to the finger above the top die side to the bottom side electrical circuitry.

35. The fingerprint sensor device of claim 31, comprising:

a second semiconductor die; and

a plurality of second interconnection structures electrically connecting the second semiconductor die the top substrate side.

36. The fingerprint sensor device of claim 31, comprising an underfill material, different from the encapsulating material, between the semiconductor die and the substrate, wherein:

the encapsulating material directly contacts and laterally surrounds the underfill material; and

each of the lateral substrate sides is coplanar with a respective lateral side of the encapsulating material.

37. A method of manufacturing a fingerprint sensor device, the method comprising:

providing a substrate having a top substrate side, a bottom substrate side, and lateral substrate sides between the top and bottom substrate sides;

providing a semiconductor die having a top die side, a bottom die side, and lateral die sides between the top and bottom die sides, wherein the semiconductor die operates to sense a fingerprint of a finger positioned above the top die side;

connecting the bottom die side to the top substrate side utilizing a plurality of conductive interconnection structures; and

forming an encapsulating material surrounding at least the lateral die sides and covering at least a portion of the top substrate side.

38. The method of claim 37, wherein said forming the encapsulating material comprises forming the encapsulating material such that at least a portion of the top die side is exposed from a top side of the encapsulating material.

39. The method of claim 37, wherein said forming the encapsulating material comprises forming the encapsulating material such that the top side of the encapsulating material is coplanar with the top die side.

40. The method of claim 37, comprising forming an underfill material, different from the encapsulating material, between the semiconductor die and the substrate, and wherein said forming the encapsulating material comprises forming the encapsulating material such that the encapsulating material directly contacts and laterally surrounds the underfill material.

41. The method of claim 37, comprising:

providing a second semiconductor die having a second top die side, a second bottom die side, and second lateral die sides between the second top die side and the second bottom die side; and

connecting the second bottom die side to the top substrate side utilizing a plurality of second conductive interconnection structures;

wherein said forming the encapsulating material comprises forming the encapsulating material surrounding at least the second lateral die sides.