SYSTEMS AND METHODS FOR FABRICATING SELF-ALIGNED RESISTIVE/MAGNETIC MEMORY CELL
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Abstract
Systems and methods are disclosed to form a resistive random access memory (RRAM) by forming a first metal electrode layer; depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; depositing a Pr1-XCaXMnOS (PCMO) layer, in an electrically biased sputtering chamber, above the insulator and the metal portions, to form one or more self-aligned RRAM cells above the first metal electrode; and depositing a second metal electrode layer above the PCMO layer.
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Citations
28 Claims
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1-19. -19. (canceled)
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20. A method of forming a magnetic random access memory (MRAM), the method comprising:
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forming a first magnetic layer; depositing an insulator above the magnetic layer; etching the insulator to expose one or more magnetic layer portions; depositing a Pr1-xCaxMnO3 (PCMO) layer in an electrically biased sputtering chamber above the insulator and the magnetic layer portions, whereby one or more self-aligned MRAM cells are formed above the first magnetic layer. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28)
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Specification