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DIE WITH INTEGRATED MICROPHONE DEVICE USING THROUGH-SILICON VIAS (TSVs)

  • US 20170245035A1
  • Filed: 09/17/2014
  • Published: 08/24/2017
  • Est. Priority Date: 09/17/2014
  • Status: Active Grant
First Claim
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1. An apparatus comprising:

  • a semiconductor substrate having a first side and a second side disposed opposite to the first side;

    an interconnect layer formed on the first side of the semiconductor substrate;

    a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate; and

    a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV.

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