DIE WITH INTEGRATED MICROPHONE DEVICE USING THROUGH-SILICON VIAS (TSVs)
First Claim
1. An apparatus comprising:
- a semiconductor substrate having a first side and a second side disposed opposite to the first side;
an interconnect layer formed on the first side of the semiconductor substrate;
a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate; and
a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV.
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Accused Products
Abstract
Embodiments of the present disclosure describe a die with integrated microphone device using through-silicon vias (TSVs) and associated techniques and configurations. In one embodiment, an apparatus includes an apparatus comprising a semiconductor substrate having a first side and a second side disposed opposite to the first side, an interconnect layer formed on the first side of the semiconductor substrate, a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate, and a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV. Other embodiments may be described and/or claimed.
26 Citations
21 Claims
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1. An apparatus comprising:
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a semiconductor substrate having a first side and a second side disposed opposite to the first side; an interconnect layer formed on the first side of the semiconductor substrate; a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate; and a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method comprising:
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providing a semiconductor substrate having a first side, a second side disposed opposite to the first side, and an interconnect layer on the first side of the semiconductor substrate; forming a through-silicon via (TSV) through the semiconductor substrate, the TSV being configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate; and forming a microphone device on the second side of the semiconductor substrate, the microphone device being electrically coupled with the TSV. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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19. A computing device comprising:
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a circuit board; and a die electrically coupled with the circuit board, the die including; a semiconductor substrate having a first side and a second side disposed opposite to the first side; an interconnect layer formed on the first side of the semiconductor substrate; a through-silicon via (TSV) formed through the semiconductor substrate and configured to route electrical signals between the first side of the semiconductor substrate and the second side of the semiconductor substrate; and a microphone device formed on the second side of the semiconductor substrate and electrically coupled with the TSV. - View Dependent Claims (20, 21)
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Specification