×

METHOD FOR FABRICATING A FIN FIELD EFFECT TRANSISTOR AND A SHALLOW TRENCH ISOLATION

  • US 20170250106A1
  • Filed: 02/25/2016
  • Published: 08/31/2017
  • Est. Priority Date: 02/25/2016
  • Status: Active Grant
First Claim
Patent Images

1. A method for fabricating a shallow trench isolation (STI) structure, comprising:

  • introducing a silane-base precursor having a volumetric flowrate of 500 sccm to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 sccm to 600 sccm, the silane-base precursor and the nitrogen-base precursor being mixed under a first pressure ranging from 0.5 torr to 1.5 torr at a first temperature ranging from 30 centigrade to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate; and

    introducing ozone gas and oxygen gas mixed under a second pressure ranging from 300 torr to 650 torr at a second temperature ranging from 50 centigrade to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1;

    1 to 3;

    1 during the flowable dielectric layer is treated.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×