METHOD FOR FABRICATING A FIN FIELD EFFECT TRANSISTOR AND A SHALLOW TRENCH ISOLATION

• US 20170250106A1
• Filed: 02/25/2016
• Published: 08/31/2017
• Est. Priority Date: 02/25/2016
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Lin, Wei Ken, Lin, Jia-Ming, Teng, Hsien-Che, Shih, Yung-Chou, She, Kun-Dian, Yang, Lichia, Chu, Yun-Wen
• Granted Patent: US 9,991,154 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02236 group IV semiconductor
• CPC Class Codes: H01L 21/02271 deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition H01L21/02266 takes precedence
• CPC Class Codes: H01L 21/02326 into a nitride layer, e.g. changing SiN to SiON
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/76224 using trench refilling with dielectric materials trench filling with polycristalline silicon H01L21/763; together with vertical isolation, e.g. trench refilling in a SOI substrate H01L21/76264
• CPC Class Codes: H01L 21/823481 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/7848 the means being located in the source/drain region, e.g. SiGe source and drain

Abstract

A method for fabricating a shallow trench isolation (STI) structure comprises the following steps. A silane-base precursor having a volumetric flowrate of 500 to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 to 600 sccm are introduced and mixed under a first pressure ranging from 0.5 to 1.5 torr at a first temperature ranging from 30 to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate. Then, ozone gas and oxygen gas are introduced and mixed under a second pressure ranging from 300 to 650 torr at a second temperature ranging from 50 to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1:1 to 3:1. A method for fabricating a FinFET is provided.

Claims

1. A method for fabricating a shallow trench isolation (STI) structure, comprising:

introducing a silane-base precursor having a volumetric flowrate of 500 sccm to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 sccm to 600 sccm, the silane-base precursor and the nitrogen-base precursor being mixed under a first pressure ranging from 0.5 torr to 1.5 torr at a first temperature ranging from 30 centigrade to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate; and

introducing ozone gas and oxygen gas mixed under a second pressure ranging from 300 torr to 650 torr at a second temperature ranging from 50 centigrade to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1;

1 to 3;

1 during the flowable dielectric layer is treated.

2. The method of claim 1, further comprising:

introducing an oxidant mixed with the silane-base precursor and the nitrogen-base precursor during the flowable dielectric layer is deposited.

3. The method of claim 2, wherein the oxidant comprises oxygen gas, ozone gas, water or combinations thereof.

4. The method of claim 2, wherein the oxidant is oxygen gas having a volumetric flowrate of 50 sccm to 400 sccm.

5. The method of claim 4, wherein the volumetric flowrate of the silane-base precursor ranges from 500 sccm to 600 sccm, the volumetric flowrate of the nitrogen-base precursor ranges from 450 sccm to 600 sccm, the volumetric flowrate of oxygen gas ranges from 50 sccm to 200 sccm during the flowable dielectric layer is deposited, the second pressure ranges from 500 torr to 650 torr, and the second temperature ranges from 50 centigrade to 150 centigrade.

6. The method of claim 1, wherein the flowable dielectric layer is deposited in the absence of oxidants.

7. The method of claim 1 further comprising:

partially removing of the flowable dielectric layer after the flowable dielectric layer is treated by ozone gas and oxygen gas.

8. A method for fabricating a shallow trench isolation (STI) structure, comprising:

depositing a flowable dielectric layer in a trench of a substrate by introducing a silane-base precursor having a volumetric flowrate of 500 sccm to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 sccm to 600 sccm, the silane-base precursor and the nitrogen-base precursor being mixed under a first pressure ranging from 0.5 torr to 1.5 torr at a first temperature ranging from 30 centigrade to 105 centigrade;

discontinuing supply of the silane-base precursor and the nitrogen-base precursor; and

curing the flowable dielectric layer by introducing ozone gas and oxygen gas mixed under a second pressure ranging from 300 torr to 650 torr at a second temperature ranging from 50 centigrade to 250 centigrade, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1;

1 to 3;

1.

9. The method of claim 8 further comprising:

introducing an oxidant mixed with the silane-base precursor and the nitrogen-base precursor during the flowable dielectric layer is deposited.

10. The method of claim 9, wherein the oxidant comprises oxygen gas, ozone gas, water or combinations thereof.

11. The method of claim 9, wherein the oxidant is oxygen gas having a volumetric flowrate of 50 sccm to 400 sccm.

12. The method of claim 11, wherein the volumetric flowrate of the silane-base precursor ranges from 500 sccm to 600 sccm, the volumetric flowrate of the nitrogen-base precursor ranges from 450 sccm to 600 sccm, the volumetric flowrate of oxygen gas ranges from 50 sccm to 200 sccm during deposition of the flowable dielectric layer, the second pressure ranges from 500 torr to 650 torr, and the second temperature ranges from 50 centigrade to 150 centigrade.

13. The method of claim 8, wherein the flowable dielectric layer is deposited in the absence of oxidants.

14. The method of claim 8 further comprising:

partially removing the cured flowable dielectric layer.

15. A method for fabricating a fin field effect transistor (FinFET), comprising:

patterning a substrate to form trenches in the substrate and semiconductor fins between the trenches;

introducing a silane-base precursor having a volumetric flowrate of 500 sccm to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 sccm to 600 sccm, the silane-base precursor and the nitrogen-base precursor being mixed under a first pressure ranging from 0.5 torr to 1.5 torr at a first temperature ranging from 30 centigrade to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate;

introducing ozone gas and oxygen gas mixed under a second pressure ranging from 300 torr to 650 torr at a second temperature ranging from 50 centigrade to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1;

1 to 3;

1 during the flowable dielectric layer is treated;

partially removing the flowable dielectric layer to form a plurality of insulators;

forming a gate stack over portions of the semiconductor fins and over portions of the insulators; and

forming a strained material over portions of the semiconductor fins revealed by the gate stack.

16. The method of claim 15 further comprising:

introducing an oxidant mixed with the silane-base precursor and the nitrogen-base precursor during the flowable dielectric layer is deposited.

17. The method of claim 16, wherein the oxidant comprises oxygen gas, ozone gas, water or combinations thereof.

18. The method of claim 16, wherein the oxidant is oxygen gas having a volumetric flowrate of 50 sccm to 400 sccm.

19. The method of claim 18, wherein the volumetric flowrate of the silane-base precursor ranges from 500 sccm to 600 sccm, the volumetric flowrate of the nitrogen-base precursor ranges from 450 sccm to 600 sccm, the volumetric flowrate of oxygen gas ranges from 50 sccm to 200 sccm during deposition of the flowable dielectric layer, the second pressure ranges from 500 torr to 650 torr, and the second temperature ranges from 50 centigrade to 150 centigrade.

20. The method of claim 15, wherein the flowable dielectric layer is deposited in the absence of oxidants.