MAKING NANOCHANNELS AND NANOTUNNELS

• US 20170253479A1
• Filed: 02/27/2017
• Published: 09/07/2017
• Est. Priority Date: 03/03/2016
• Status: Active Grant

• Current Assignee: THE GOVERNMENT OF THE UNITED STATES OF AMERICA, AS REPRESENTED BY THE SECRETARY OF COMMERCE
• Original Assignee: Government of The USA As Represent By The Secretary of Commerce
• Inventors: NIKOOBAKHT, IV, BABAK
• Granted Patent: US 9,809,452 B2
• Time in Patent Office: Days
• CPC Class Codes: B01L 2200/12 Specific details about manufacturing devices
• CPC Class Codes: B01L 2300/0896 Nanoscaled
• CPC Class Codes: B01L 3/502707 characterised by the manufacture of the container or its components by shaping or joining plastic parts B29C59/00, B29C65/00; by laminating B32B37/00; manufacture of microstructural devices in general B81C
• CPC Class Codes: B81B 2203/033 Trenches
• CPC Class Codes: B81C 1/00063 Trenches
• CPC Class Codes: B81C 2201/0149 Forming nanoscale microstructures using auto-arranging or self-assembling material
• CPC Class Codes: B82B 1/001 Devices without movable or flexible elements
• CPC Class Codes: B82B 3/0019 without movable or flexible elements
• CPC Class Codes: H01L 21/02241 III-V semiconductor
• CPC Class Codes: H01L 21/30612 Etching of AIIIBV compounds
• CPC Class Codes: H01L 21/3245 of AIIIBV compounds

Abstract

A process for making a nanoduct includes: disposing an etchant catalyst on a semiconductor substrate including a single crystal structure; heating the semiconductor substrate to an etching temperature; introducing an oxidant; contacting the semiconductor substrate with the oxidant in a presence of the etchant catalyst; anisotropically etching the semiconductor substrate by the etchant catalyst in a presence of the oxidant in an etch direction that is coincident along a crystallographic axis of the semiconductor substrate; and forming the nanoduct as the etchant catalyst propagates along a surface of the semiconductor substrate during anisotropically etching the semiconductor substrate, the nanoduct being crystallographically aligned with the crystallographic axis of the semiconductor substrate.

Claims

1. A process for making a nanoduct, the process comprising:

disposing an etchant catalyst on a semiconductor substrate comprising a single crystal structure;

heating the semiconductor substrate to an etching temperature;

introducing an oxidant;

contacting the semiconductor substrate with the oxidant in a presence of the etchant catalyst;

anisotropically etching the semiconductor substrate by the etchant catalyst in a presence of the oxidant in an etch direction that is coincident along a crystallographic axis of the semiconductor substrate; and

forming the nanoduct as the etchant catalyst propagates along a surface of the semiconductor substrate during anisotropically etching the semiconductor substrate, the nanoduct being crystallographically aligned with the crystallographic axis of the semiconductor substrate.

2. The process for making a nanoduct of claim 1, further comprising:

forming a pattern of the etchant catalyst on the surface of the semiconductor substrate prior to introducing the oxidant.

3. The process for making a nanoduct of claim 2, further comprising:

forming a plurality of droplets comprising the etchant catalyst in response to heating the semiconductor substrate.

4. The process for making a nanoduct of claim 1, further comprising:

dissolving, by the etchant catalyst, a portion of the semiconductor substrate in contact with the etchant catalyst during anisotropically etching the semiconductor substrate.

5. The process for making a nanoduct of claim 2, further comprising:

converting the portion of the semiconductor substrate to a volatile oxide during anisotropically etching the semiconductor substrate.

6. The process for making a nanoduct of claim 5, converting the portion of the semiconductor substrate to the volatile oxides comprises:

reacting the portion of the semiconductor substrate with oxidant to form the volatile oxide.

7. The process for making a nanoduct of claim 1, further comprising:

disposing a covering layer on the semiconductor substrate to form a covered portion of the semiconductor substrate.

8. The process for making a nanoduct of claim 7, further comprising:

anisotropically etching the covered portion of the semiconductor substrate by the etchant catalyst in presence of the oxidant in the etch direction that is coincident along the crystallographic axis of the semiconductor substrate; and

forming the nanoduct comprising a nanotunnel in the covered portion of the semiconductor substrate in response to anisotropically etching the covered portion.

9. The process for making a nanoduct of claim 1, further comprising:

disposing a blocking layer on the semiconductor substrate to form a blocking portion of the semiconductor substrate.

10. The process for making a nanoduct of claim 9, further comprising:

terminating the anisotropically etching of the semiconductor substrate at the blocking portion.

11. The process for making a nanoduct of claim 1, wherein:

the etchant catalyst comprises gold, silver, gallium arsenide, or a combination comprising at least one of the foregoing etchant catalysts.

12. The process for making a nanoduct of claim 1, wherein:

the semiconductor substrate comprises arsenic, gallium, germanium, indium, phosphorous, silicon, or a combination comprising at least one of the foregoing semiconductor substrates.

13. The process for making a nanoduct of claim 12, wherein:

the semiconductor substrate comprises gallium arsenide, indium arsenide, indium phosphide, silicon, or a combination comprising at least one of the foregoing semiconductor substrates.

14. The process for making a nanoduct of claim 1, wherein:

the nanoduct comprises a nanochannel, a nanotunnel, or a combination comprising at least one of the foregoing nanoducts.

15. The process for making a nanoduct of claim 14, wherein:

the nanoduct further comprises a nanofrustocone.

16. The process for making a nanoduct of claim 15, wherein:

the nanofrustocone comprises a convergent nanofrustocone.

17. The process for making a nanoduct of claim 15, wherein:

the nanofrustocone comprises a divergent nanofrustocone.

18. The process for making a nanoduct of claim 14, wherein:

the nanoduct comprises the nanochannel, and the nanochannel comprises a truncated nanofrustocone.

19. The process for making a nanoduct of claim 18, wherein:

the truncated nanofrustocone comprises a convergent truncated nanofrustocone.

20. The process for making a nanoduct of claim 18, wherein:

the truncated nanofrustocone comprises a divergent truncated nanofrustocone.