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Lithography Patterning with Flexible Solution Adjustment

  • US 20170255101A1
  • Filed: 03/04/2016
  • Published: 09/07/2017
  • Est. Priority Date: 03/04/2016
  • Status: Active Grant
First Claim
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1. A method for lithography patterning, comprising:

  • forming a first layer over a substrate, the first layer being radiation-sensitive;

    exposing the first layer to a radiation;

    applying a developer to the exposed first layer, resulting in a pattern over the substrate, wherein;

    the developer includes a developing chemical whose concentration in the developer is a function of time during the applying of the developer.

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