Lithography Patterning with Flexible Solution Adjustment

• US 20170255101A1
• Filed: 03/04/2016
• Published: 09/07/2017
• Est. Priority Date: 03/04/2016
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wang, Chung-Cheng
• Granted Patent: US 10,386,723 B2
• Time in Patent Office: Days
• CPC Class Codes: G03F 7/20 Exposure; Apparatus therefor photographic printing apparatus for making copies G03B27/00
• CPC Class Codes: G03F 7/3071 Process control means, e.g. for replenishing
• CPC Class Codes: G03F 7/32 Liquid compositions therefor, e.g. developers
• CPC Class Codes: G03F 7/322 Aqueous alkaline compositions
• CPC Class Codes: G03F 7/325 Non-aqueous compositions
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking

Abstract

A method for lithography patterning includes forming a first layer over a substrate, the first layer being radiation-sensitive. The method further includes exposing the first layer to a radiation. The method further includes applying a developer to the exposed first layer, resulting in a pattern over the substrate, wherein the developer includes a developing chemical whose concentration in the developer is a function of time during the applying of the developer.

Claims

1. A method for lithography patterning, comprising:

forming a first layer over a substrate, the first layer being radiation-sensitive;

exposing the first layer to a radiation;

applying a developer to the exposed first layer, resulting in a pattern over the substrate, wherein;

the developer includes a developing chemical whose concentration in the developer is a function of time during the applying of the developer.

2. The method of claim 1, wherein the applying of the developer to the exposed first layer includes a plurality of stages, and the concentration of the developing chemical in the developer varies from one stage to a subsequent stage.

3. The method of claim 2, wherein the concentration of the developing chemical in the developer remains substantially constant in each stage.

4. The method of claim 1, wherein the applying of the developer to the exposed first layer includes:

applying the developer with a first concentration of the developing chemical for a first duration; and

after the applying of the developer with the first concentration, applying the developer with a second concentration of the developing chemical for a second duration, wherein the first concentration is lower than the second concentration.

5. The method of claim 1, wherein the applying of the developer to the exposed first layer includes:

supplying a first solution containing the developing chemical into a supply pipe at a first flow rate;

supplying a second solution to the supply pipe at a second flow rate, wherein the first and second solutions mix in the supply pipe to form the developer;

dispensing the developer from the supply pipe to the exposed first layer; and

adjusting at least one of;

the first flow rate and the second flow rate, so as to vary the concentration of the developing chemical in the developer.

6. The method of claim 5, wherein the first solution includes a positive tone developer and the second solution is deionized water (DIW).

7. The method of claim 5, wherein the first solution includes a negative tone developer and the second solution includes an organic solvent.

8. The method of claim 1, further comprising:

rinsing the pattern with a rinse solution; and

after the rinsing of the pattern, treating the pattern with a first treatment chemical, wherein;

the first treatment chemical includes a first surfactant; and

a concentration of the first surfactant in the first treatment chemical is a function of time during the treating of the pattern with the first treatment chemical.

9. The method of claim 8, further comprising;

after the treating of the pattern with the first treatment chemical, treating the pattern with a second treatment chemical, wherein;

the second treatment chemical includes a second surfactant;

a concentration of the second surfactant in the second treatment chemical is a function of time during the treating of the pattern with the second treatment chemical; and

the first and second surfactants have different compositions.

10. A method for lithography patterning, comprising:

providing a substrate;

forming a first layer over the substrate, the first layer being radiation-sensitive;

exposing the first layer to a radiation;

applying a developer onto the exposed first layer to result in a pattern over the substrate, wherein the developer includes a developing chemical; and

during the applying of the developer, adjusting a concentration of the developing chemical in the developer.

11. The method of claim 10, wherein the applying of the developer includes dispensing the developer from a supply pipe to the exposed first layer;

and wherein the adjusting of the concentration of the developing chemical in the developer includes;

supplying a first solution containing the developing chemical to the supply pipe at a first flow rate;

supplying a second solution to the supply pipe at a second flow rate, wherein the first and second solutions mix in the supply pipe to form the developer; and

adjusting at least one of;

the first flow rate and the second flow rate.

12. The method of claim 11, wherein the second solution contains the developing chemical at a lower concentration than the first solution does.

13. The method of claim 11, wherein the second solution is a solvent free of the developing chemical.

14. The method of claim 10, wherein the adjusting of the concentration of the developing chemical in the developer includes:

setting a first concentration of the developing chemical in the developer;

maintaining the first concentration of the developing chemical in the developer for a first duration;

setting a second concentration of the developing chemical in the developer, the second concentration being different from the first concentration; and

maintaining the second concentration of the developing chemical in the developer for a second duration.

15. The method of claim 14, wherein the first concentration is lower than the second concentration.

16. The method of claim 10, further comprising, after the applying of the developer:

rinsing the pattern with a rinse solution.

17. A system for lithography patterning, comprising:

a first supply pipe for supplying a first solution;

a second supply pipe for supplying a second solution;

a third supply pipe coupled to the first and second supply pipes for receiving the first and second solutions respectively and mixing the first and second solutions into a mixture;

a substrate stage for holding a substrate;

a supply nozzle coupled to the third supply pipe for dispensing the mixture to the substrate;

a first control unit coupled to the first supply pipe and configured to control a flow rate of the first solution going to the third supply pipe; and

a second control unit coupled to the second supply pipe and configured to control a flow rate of the second solution going to the third supply pipe.

18. The system of claim 17, wherein a section of the third supply pipe that is proximal to the first and second supply pipes is larger in diameter than another section of the third supply pipe that is distal to the first and second supply pipes.

19. The system of claim 17, wherein at least one of the first and second control units is configured to provide at least three levels of flow rate control:

a minimum flow rate, a maximum flow rate, and an intermediate flow rate that is less than the maximum flow rate and greater than the minimum flow rate.

20. The system of claim 17, wherein the first and second control units are configured to adjust the flow rates of the first and second solutions according to a process recipe so as to vary a chemical concentration in the mixture.