METHOD AND SYSTEM FOR PROVIDING A MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE APPLICATIONS USING MULTIPLE STACK DEPOSITIONS

• US 20170256708A1
• Filed: 06/08/2016
• Published: 09/07/2017
• Est. Priority Date: 03/07/2016
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Krounbi, Mohamad Towfik, Erickson, Dustin William, Tang, Xueti, Lee, Donkoun
• Granted Patent: US 10,164,175 B2
• Time in Patent Office: Days
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/80 Constructional details
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A method for providing magnetic junctions is described. Each magnetic junction includes a free layer. A first portion of a stack for the magnetic junctions is provided. The first portion of a stack includes magnetic layer(s) for the free layer. A hard mask is provided. The hard mask covers a part of the first portion of the stack corresponding to the magnetic junctions. The hard mask includes aperture(s) exposing a second part of the first portion of the stack corresponding to spacing(s) between the magnetic junctions. The spacing(s) are not more than fifty nanometers. The second part of the first portion of the stack is etched. A remaining part of the first portion of the stack forms a first portion of each magnetic junction. This first portion of each magnetic junction includes the free layer. A second portion of the stack for the magnetic junctions is also provided.

Claims

1. A method for providing a plurality of magnetic junctions residing on a substrate, each of the plurality of magnetic junctions including a free layer, the method comprising:

providing a first portion of a stack for the plurality of magnetic junctions, the first portion of a stack including at least one magnetic layer for the free layer;

providing a hard mask on the first portion of the stack, the hard mask covering a first part of the first portion of the stack corresponding to the plurality of magnetic junctions, the hard mask including at least one aperture exposing a second part of the first portion of the stack corresponding to at least one spacing between the plurality of magnetic junctions, the at least one spacing being not more than fifty nanometers;

etching the second part of the first portion of the stack, a remaining part of the first portion of the stack forming a first portion of each of the plurality of magnetic junctions, the first portion of each of the plurality of magnetic junctions including the free layer;

providing a second portion of the stack for the plurality of magnetic junctions.

2. The method of claim 1 further comprising:

providing an additional mask on the second portion of the stack, the additional mask covering a first part of the second portion of the stack corresponding to the plurality of magnetic junctions, the additional mask including at least one additional mask aperture exposing a second part of the second portion of the stack, the first part of the second portion of the stack being on the first portion of each of the plurality of magnetic junctions; and

etching the second part of the second portion of the stack, a remaining part of the second portion of the stack forming a second portion of each of the plurality of magnetic junctions.

3. The method of claim 2 wherein the first portion of each of the plurality of magnetic junctions has a first lateral dimension and the second portion of each of the plurality of magnetic junctions has a second lateral dimension, the second lateral dimension being not smaller than the first lateral dimension.

4. The method of claim 3 wherein the second lateral dimension is at least five percent larger than the first lateral dimension.

5. The method of claim 4 wherein the second lateral dimension is greater than the at least one spacing.

6. The method of claim 1 wherein the at least one spacing is not more than forty nanometers.

7. The method of claim 1 wherein the hard mask is a carbon hard mask.

8. The method of claim 1 wherein the first portion of the stack includes an adhesion layer including at least one of Mg, MgTi, MgAl, Ti and Ta and wherein the hard mask resides on the adhesion layer.

9. The method of claim 8 wherein the adhesion layer is an Mg layer, wherein each of the plurality of magnetic junctions includes a pinned layer and a nonmagnetic spacer layer between the pinned layer and the free layer and wherein the nonmagnetic spacer layer includes Mg.

10. The method of claim 9 wherein the step of etching the second portion of the first plurality of layers further includes:

performing an ion beam etch; and

removing the hard mask using an oxygen reactive ion etch, the oxygen reactive ion etch further oxidizing the Mg layer to provide an MgO layer, the MgO layer forming at least a portion of the nonmagnetic spacer layer such that the portion of the nonmagnetic spacer layer is self-aligned with the free layer.

11. The method of claim 1 wherein the second portion of the stack includes at least an additional magnetic layer corresponding to a pinned layer for each of the plurality of magnetic junctions and wherein each of the plurality of magnetic junctions includes a nonmagnetic spacer layer between the free layer and the pinned layer.

12. The method of claim 11 wherein the first portion of each of the plurality of magnetic junctions includes an additional pinned layer and an additional nonmagnetic spacer layer between the free layer and the additional pinned layer.

14. The method of claim 12 further comprising:

providing an additional mask on the second plurality of layers, the additional mask covering a first portion of the second plurality of layers corresponding to the plurality of magnetic junctions, the second mask including at least one second mask aperture exposing a second portion of the second plurality of layers, the first portion of the second plurality of layers covering the remaining portion of the first plurality of layers; and

ion beam etching the second portion of the second plurality of layers, a remaining portion of the second plurality of layers forming a second portion of each of the plurality of magnetic junctions, the second portion including the pinned layer.

13. A method for providing a plurality of magnetic junctions, each of the plurality of magnetic junctions including a pinned layer, a free layer and a nonmagnetic tunneling barrier layer between the pinned layer and the free layer, the method comprising:

providing a first plurality of layers for the plurality of magnetic junctions, the first plurality of layers including a magnetic layer for the free layer and an Mg layer on the magnetic layer;

providing a carbon hard mask on the Mg layer, the carbon hard mask covering a first portion of the first plurality of layers corresponding to the plurality of magnetic junctions, the carbon hard mask including at least one aperture exposing a second portion of the first plurality of layers corresponding to at least one spacing between the plurality of magnetic junctions, the at least one spacing being not more than fifty nanometers;

ion beam etching the second portion of the first plurality of layers, a remaining portion of the first plurality of layers forming a first portion of each of the plurality of magnetic junctions, the first portion including the free layer, the free layer for each the plurality of magnetic junctions being at the at least one spacing;

providing an insulating refill between the first portion of each of the plurality of magnetic junctions;

removing the carbon hard mask using an oxygen reactive ion etch, the oxygen reactive ion etch oxidizing the Mg layer to provide an MgO layer, the MgO layer forming at least a portion of the nonmagnetic tunneling barrier layer;

providing a second plurality of layers forming a second portion of the stack for the plurality of magnetic junctions, the second plurality of layers including an additional magnetic layer for a pinned layer for each of the plurality of magnetic junctions.

15. A memory magnetic junction residing on a substrate and comprising:

a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction, the at least one magnetic junction including a free layer, a pinned layer and a nonmagnetic spacer layer between the pinned layer and the free layer, the free layer being switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, the plurality of storage cells being separated by at least one spacing of not more than fifty nanometers, the free layer for each of the at least one magnetic junction being closer to the substrate than the pinned layer, the free layer having a first lateral dimension, the pinned layer having a second lateral dimension not smaller than the first lateral dimension; and

a plurality of conductive lines coupled to the plurality of magnetic storage cells.

16. The magnetic memory of claim 15 wherein the second lateral dimension is at least five percent larger than the first lateral dimension.

17. The magnetic memory of claim 15 wherein the second lateral dimension is greater than the at least one spacing.

18. The magnetic memory of claim 15 wherein the at least one spacing is not more than forty nanometers.

19. The magnetic memory of claim 15 wherein each of the at least one magnetic junction includes an additional nonmagnetic spacer layer between the free layer and the additional pinned layer.

20. The magnetic memory of claim 15 wherein the nonmagnetic spacer layer is a barrier layer, a first portion of the barrier layer having the first lateral dimension, the second portion of the barrier layer having the second lateral dimension.