High-Speed VCSEL Device
First Claim
1. A Vertical Cavity Surface Emitting Laser (VCSEL) comprising:
- a) a reflecting surface of the VCSEL;
b) a gain region positioned on the reflective surface that generates optical gain, the gain region comprising;
i. a first and second multiple quantum well stack;
ii. a tunnel junction positioned between the first and second multiple quantum well stack; and
iii. a current aperture positioned on one of the first and second multiple quantum well stack, the current aperture confining a current flow in the gain region; and
c) a partially reflective surface, the reflective surface, and the partially reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface.
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Accused Products
Abstract
A Vertical Cavity Surface Emitting Laser (VCSEL) includes a reflecting surface of the VCSEL. A gain region is positioned on the distributed Bragg reflector that generates optical gain. The gain region comprises a first and second multiple quantum well stack, a tunnel junction positioned between the first and second multiple quantum well stack, and a current aperture positioned on one of the first and second multiple quantum well stack. The current aperture confines a current flow in the gain region. A partially reflective surface and the reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface.
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Citations
66 Claims
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1. A Vertical Cavity Surface Emitting Laser (VCSEL) comprising:
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a) a reflecting surface of the VCSEL; b) a gain region positioned on the reflective surface that generates optical gain, the gain region comprising; i. a first and second multiple quantum well stack; ii. a tunnel junction positioned between the first and second multiple quantum well stack; and iii. a current aperture positioned on one of the first and second multiple quantum well stack, the current aperture confining a current flow in the gain region; and c) a partially reflective surface, the reflective surface, and the partially reflective surface forming a VCSEL resonant cavity, wherein an output optical beam propagates from the partially reflecting surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A top emitting Vertical Cavity Surface Emitting Laser (VCSEL) comprising:
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a) a high reflecting distributed Bragg reflector epitaxially grown on a semiconductor substrate; b) a gain region that generates optical gain comprising multiple semiconductor layers epitaxially grown above the high reflecting distributed Bragg reflector, the gain region comprising; i. a first and second multiple quantum well stack; ii. a tunnel junction positioned between the first and second multiple quantum well stack; and iii. a current aperture positioned on one of the first and second multiple quantum well stack, the current aperture confining a current flow in the gain region; c) a partially reflecting distributed Bragg reflector epitaxially grown above the gain region to form a VCSEL resonant cavity with the high reflecting distributed Bragg reflector, wherein an output optical beam propagates from the partially reflecting distributed Bragg reflector; d) a bottom electrical contact formed on the semiconductor substrate; and e) a top electrical contact formed on the partially reflecting distributed Bragg reflector, the top and bottom electrical contacts configured to receive an electrical current that activates the VCSEL. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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44. A bottom emitting Vertical Cavity Surface Emitting Laser (VCSEL) comprising:
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a) a partially reflecting distributed Bragg reflector epitaxially grown on a semiconductor substrate; b) a gain region that generates optical gain comprising multiple semiconductor layers epitaxially grown above the partially reflecting distributed Bragg reflector, the gain region comprising; i. a first and second multiple quantum well stack; ii. a tunnel junction positioned between the first and second multiple quantum well stack; and iii. an aperture positioned on one of the first and second multiple quantum well stack, the aperture confining a current flow in the gain region; c) a high reflecting distributed Bragg reflector epitaxially grown above the gain region to form a VCSEL resonant cavity with the partially reflecting distributed Bragg reflector, wherein an output optical beam propagates from the partially reflecting distributed Bragg reflector through the semiconductor substrate; d) a bottom electrical contact formed on the substrate; and e) a top electrical contact formed on the high reflecting distributed Bragg reflector, the top and bottom electrical contracts configured to receive an electrical current that activates the VCSEL. - View Dependent Claims (45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58)
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59. A method of fabricating a Vertical Cavity Surface Emitting Laser (VCSEL) comprising:
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a) epitaxially growing a first reflecting distributed Bragg reflector on a semiconductor substrate; b) epitaxially growing a gain region comprising a first and second multiple quantum well stack, a tunnel junction positioned between the first and second multiple quantum well stack, and a current aperture positioned on one of the first and second multiple quantum well stack; c) epitaxially growing a second reflecting distributed Bragg reflector above the gain region to form a VCSEL resonant cavity with the first reflecting distributed Bragg reflector, wherein an output optical beam propagates from one of the first and second reflecting distributed Bragg reflector; d) forming a first electrical contact on the semiconductor substrate; and e) forming a second electrical contact on the second partially reflecting distributed Bragg reflector, the first and second electrical contacts being configured to receive an electrical current that activates the VCSEL. - View Dependent Claims (60, 61, 62, 63, 64, 65, 66)
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Specification