SEMICONDUCTOR DEVICE
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Abstract
A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.
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Citations
21 Claims
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1. (canceled)
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2. A display device comprising:
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a circuit comprising a first transistor; a first pixel and a second pixel; and a first wire, a second wire, and a third wire, wherein the first wire, the second wire and the third wire are electrically connected to the circuit, wherein the second wire is electrically connected to the first pixel, wherein the third wire is electrically connected to the second pixel, wherein the circuit is configured to distribute a signal from the first wire to the second wire and the third wire, wherein the first transistor comprises a first oxide semiconductor film stacked a second oxide semiconductor film, and wherein an atomic ratio of indium in the first oxide semiconductor film is different from an atomic ratio of indium in the second oxide semiconductor film. - View Dependent Claims (3, 4, 5, 6, 7, 8)
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9. A display device comprising:
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a circuit comprising a first transistor; a first pixel and a second pixel, wherein each the first pixel and the second pixel comprises a second transistor; and a first wire, a second wire, and a third wire, wherein the first wire, the second wire and the third wire are electrically connected to the circuit, wherein the second wire is electrically connected to the first pixel, wherein the third wire is electrically connected to the second pixel, wherein the circuit is configured to distribute a signal from the first wire to the second wire and the third wire, wherein the first transistor comprises a first oxide semiconductor film stacked a second oxide semiconductor film, wherein an atomic ratio of indium in the first oxide semiconductor film is different from an atomic ratio of indium in the second oxide semiconductor film, wherein the second transistor comprises a fourth oxide semiconductor film, and wherein the atomic ratio of indium in the fourth oxide semiconductor film is the same as the atomic ratio of indium in the second oxide semiconductor film. - View Dependent Claims (10, 11, 12, 13, 14)
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15. A display device comprising:
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a circuit comprising a first transistor; a first pixel and a second pixel; and a first wire, a second wire, and a third wire, wherein the first wire, the second wire and the third wire are electrically connected to the circuit, wherein the second wire is electrically connected to the first pixel, wherein the third wire is electrically connected to the second pixel, wherein the circuit is configured to distribute a signal from the first wire to the second wire and the third wire, wherein the first transistor comprises; a gate electrode; a first oxide semiconductor film; an insulating layer interposed between the gate electrode and the first oxide semiconductor film; and a second oxide semiconductor film on the first oxide semiconductor film, and wherein an atomic ratio of indium in the first oxide semiconductor film is different from an atomic ratio of indium in the second oxide semiconductor film. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification