POWER SEMICONDUCTOR MODULE, FLOW PATH MEMBER, AND POWER-SEMICONDUCTOR-MODULE STRUCTURE

• US 20170263533A1
• Filed: 05/26/2017
• Published: 09/14/2017
• Est. Priority Date: 06/17/2015
• Status: Active Grant

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: KOYAMA, Takahiro, GOHARA, Hiromichi
• Granted Patent: US 10,192,807 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/32227 the layer connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49113 the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
• CPC Class Codes: H01L 2224/4917 Crossed wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/8384 Sintering
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/4006 with bolts or screws
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 24/00 Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 25/07 : the devices being of a type provided for in group H01L29/00
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/19107 : off-chip wires

Abstract

The invention is provided with a metal base plate including a first surface and a second surface and a cooling case including a bottom wall and a side wall formed around the bottom wall, in which one end of the side wall being joined to a second surface side of the metal base plate, and a coolant can be circulated in a space enclosed by the metal base plate, the bottom wall, and the side wall, in which the cooling case has an inlet portion and an outlet portion for the coolant which are connected to either the bottom wall or the side wall and disposed along a peripheral edge of the second surface of the metal base plate, and includes a first flange disposed at an inlet opening side of the inlet portion and a second flange disposed at an outlet opening side of the outlet portion.

Claims

1. A power semiconductor module comprising:

a metal base plate including a first surface and a second surface;

a multi-layer substrate joined to the first surface, the multi-layer substrate including a third surface and a fourth surface;

a semiconductor element carried on the third surface;

a resin case disposed on the first surface side of the metal base plate, the resin case surrounding the multi-layer substrate and the semiconductor element; and

a cooling case including a bottom wall and a side wall formed around the bottom wall, one end of the side wall being joined to the second surface side of the metal base plate such that a coolant can be circulated in a space enclosed by the metal base plate, the bottom wall and the side wall, wherein

the cooling case has an inlet portion and an outlet portion for the coolant, the inlet portion and the outlet portion being connected to either the bottom wall or the side wall and disposed along a peripheral edge of the second surface of the metal base plate, the cooling case including a first flange disposed at an inlet opening side of the inlet portion and a second flange disposed at an outlet opening side of the outlet portion.

2. The power semiconductor module according to claim 1, wherein

the first flange includes a first opening portion opposed to the inlet opening and a pair of first bolt holes disposed to have the first opening portion therebetween, and

the second flange includes a second opening portion opposed to the outlet opening and a pair of second bolt holes disposed to have the second opening portion therebetween.

3. The power semiconductor module according to claim 2, wherein the resin case includes a pair of first through holes corresponding to the first bolt holes and a pair of second through holes corresponding to the second bolt holes, the first bolt holes and the first through holes are disposed in such a manner that a bolt can be inserted in a thickness direction of the resin case, and the second bolt holes and the second through holes are disposed in such a manner that a bolt can be inserted in the thickness direction of the resin case.

4. The power semiconductor module according to claim 2, wherein a segment between the first bolt holes and a segment between the second bolt holes are substantially parallel to each other.

5. The power semiconductor module according to claim 4, wherein respective major axis directions of the first flange and the second flange extend along a long side direction of the metal base plate.

6. The power semiconductor module according to claim 1, wherein the semiconductor element includes a plurality of first semiconductor elements which compose an upper arm of an inverter circuit and a plurality of second semiconductor elements which compose a lower arm of the inverter circuit, and the first semiconductor elements and the second semiconductor elements are disposed along a movement direction of the coolant capable of circulating in the cooling case.

7. The power semiconductor module according to claim 1, wherein the first flange and the second flange are brazed each through a washer to the cooling case.

14. The power semiconductor module according to claim 1, provided with a first pair consisting of an upper arm and a lower arm and a second pair consisting of an upper arm and a lower arm, wherein

the first pair at least includes a first multi-layer substrate as the multi-layer substrate, first semiconductor elements composing the upper arm and second semiconductor elements composing the lower arm as the semiconductor element, and a first power supply terminal supplying power to the first semiconductor elements and the second semiconductor elements, and

the second pair at least includes a second multi-layer substrate as the multi-layer substrate, third semiconductor elements composing the upper arm and fourth semiconductor elements composing the lower arm as a semiconductor element, and a second power supply terminal supplying power to the third semiconductor elements and the fourth semiconductor elements.

15. The power semiconductor module according to claim 14, wherein

the first power supply terminal includes a first positive terminal capable of being connected to a positive side of a power source and a first negative terminal capable of being connected to a negative side of the power source,

the second power supply terminal includes a second positive terminal capable of being connected to the positive side of the power source and a second negative terminal capable of being connected to the negative side of the power source,

the first positive terminal and the second positive terminal are different terminals and have the same shape, and

the first negative terminal and the second negative terminal are different terminals and have the same shape.

16. The power semiconductor module according to claim 15, wherein

the first positive terminal and the second positive terminal have the same size, and

the first negative terminal and the second negative terminal have the same size.

17. The power semiconductor module according to claim 15, wherein

the first positive terminal and the second positive terminal each include a leg portion,

the first negative terminal and the second negative terminal each include a leg portion,

an extending direction of the leg portion of the first positive terminal and an extending direction of the leg portion of the first negative terminal are parallel to each other,

an extending direction of the leg portion of the second positive terminal and an extending direction of the leg portion of the second negative terminal are parallel to each other, and

the extending direction of the leg portion of the first positive terminal and the extending direction of the leg portion of the second positive terminal are parallel to each other.

18. The power semiconductor module according to claim 15, wherein

the first positive terminal and the first negative terminal are configured in such a manner that a first capacitor can be connected therebetween, and

the second positive terminal and the second negative terminal are configured in such a manner that a second capacitor can be connected therebetween.

8. A flow path member capable of being combined with a power semiconductor module, wherein

the power semiconductor module includes:

a metal base plate; and

a cooling case including a bottom wall and a side wall formed around the bottom wall, one end of the side wall being joined to a rear surface of the metal base plate such that a coolant can be circulated in a space enclosed by the metal base plate, the bottom wall, and the side wall,

further, the cooling case has an inlet portion and an outlet portion for the coolant, the inlet portion and the outlet portion being connected to either the bottom wall or the side wall and disposed along a peripheral edge of the rear surface of the metal base plate, the cooling case including a first flange disposed at an inlet opening side of the inlet portion and a second flange disposed at an outlet opening side of the outlet portion, and

the flow path member includes a first connection portion capable of being connected to the first flange, a second connection portion capable of being connected to the second flange, a first flow path connected to the first connection portion and capable of circulating the coolant, and a second flow path connected to the second connection portion and capable of circulating the coolant, and is capable of being disposed to face a bottom surface of the cooling case.

9. The flow path member according to claim 8, wherein

the first flange includes a first opening portion opposed to the inlet opening and a pair of first bolt holes to have the first opening portion therebetween,

the second flange includes a second opening portion opposed to the outlet opening and a pair of second bolt holes to have the second opening portion therebetween,

the first connection portion is provided with nuts as positioned with respect to the first bolt holes, and

the second connection portion is provided with nuts as positioned with respect to the second bolt holes.

10. The flow path member according to claim 8, wherein the first connection portion and the second connection portion are each provided with a groove for housing an O-ring.

11. A power-semiconductor-module structure consisting of a power semiconductor module and a flow path member combined with each other, wherein

said power semiconductor module comprises:

a metal base plate including a first surface and a second surface;

a multi-layer substrate joined to the first surface and including a third surface and a fourth surface;

a semiconductor element carried on the third surface;

a resin case disposed on the first surface side of the metal base plate and surrounding the multi-layer substrate and the semiconductor element; and

a cooling case including a bottom wall and a side wall formed around the bottom wall, in which one end of the side wall being joined to the second surface side of the metal base plate, and a coolant can be circulated in a space enclosed by the metal base plate, the bottom wall, and the side wall, wherein

the cooling case has an inlet portion and an outlet portion for the coolant, the inlet portion and the outlet portion being connected to either the bottom wall or the side wall and disposed along a peripheral edge of the second surface of the metal base plate, the cooling case including a first flange disposed at an inlet opening side of the inlet portion and a second flange disposed at an outlet opening side of the outlet portion, and wherein

the flow path member includes a first connection portion capable of being connected to the first flange, a second connection portion capable of being connected to the second flange, a first flow path connected to the first connection portion and capable of circulating the coolant, and a second flow path connected to the second connection portion and capable of circulating the coolant, and is capable of being disposed to face a bottom surface of the cooling case.

12. The power-semiconductor-module structure according to claim 11, wherein the power semiconductor module and the flow path member are fastened by a plurality of bolts.

13. The power-semiconductor-module structure according to claim 11, wherein the first connection port and the second connection port are each provided with a groove for housing an O-ring, and each groove is provided with the O-ring.