HEAT DISSIPATION COMPONENT FOR SEMICONDUCTOR ELEMENT

• US 20170268834A1
• Filed: 09/01/2015
• Published: 09/21/2017
• Est. Priority Date: 09/02/2014
• Status: Active Grant

• Current Assignee: Denka Company Limited
• Original Assignee: Denka Company Limited
• Inventors: ISHIHARA, Yosuke, MIYAKAWA, Takeshi, KOYANAGI, Kazunori
• Granted Patent: US 10,539,379 B2
• Time in Patent Office: Days
• CPC Class Codes: B22F 7/06 of composite workpieces or articles from parts, e.g. to form tipped tools B22F7/002 takes precedence
• CPC Class Codes: C22C 21/02 with silicon as the next major constituent
• CPC Class Codes: C22C 26/00 Alloys containing diamond or cubic or wurtzitic boron nitride, fullerenes or carbon nanotubes
• CPC Class Codes: C22C 47/12 Infiltration or casting under mechanical pressure
• CPC Class Codes: C22C 49/06 Aluminium
• CPC Class Codes: C23C 18/32 Coating with nickel, cobalt or mixtures thereof with phosphorus or boron C23C18/50 takes precedence
• CPC Class Codes: C23C 18/42 Coating with noble metals
• CPC Class Codes: C25D 5/12 at least one layer being of nickel or chromium
• CPC Class Codes: C25D 5/44 Aluminium
• CPC Class Codes: C25D 5/617 Crystalline layers
• CPC Class Codes: F28F 21/02 of carbon, e.g. graphite
• CPC Class Codes: F28F 21/084 from aluminium or aluminium alloys
• CPC Class Codes: F28F 21/089 Coatings, claddings or bonding layers made from metals or metal alloys F28F19/06 takes precedence
• CPC Class Codes: F28F 2255/06 composite, e.g. polymers with fillers or fibres
• CPC Class Codes: H01L 21/4871 Bases, plates or heatsinks
• CPC Class Codes: H01L 23/373 Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
• CPC Class Codes: H01L 23/3732 Diamonds
• CPC Class Codes: H01L 23/3736 Metallic materials H01L23/3732, H01L23/3733, H01L23/3735, H01L23/3737, H01L23/3738 take precedence
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 428/12056 : Entirely inorganic
• CPC Class Codes: Y10T 428/12069 : Plural nonparticulate metal components

Abstract

A heat dissipation component for a semiconductor element includes: a composite part containing 50-80 vol % diamond powder with the remainder having metal including aluminum, the diamond powder having a particle diameter volume distribution first peak at 5-25 μm and a second peak at 55-195 μm. A ratio between a volume distribution area at particle diameters of 1-35 μm and a volume distribution area at particle diameters of 45-205 μm is 1:9 to 4:6; surface layers on both composite part principal surfaces, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and a crystalline Ni layer and an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 μm, and the Au layer having a film thickness of 0.05 μm or larger.

Claims

1. A heat dissipation component for a semiconductor element, the heat dissipation component comprising:

a composite part containing 50-80 vol % diamond powder with the remainder being composed of metal including aluminum, the diamond powder being a diamond powder in which a first peak of a volume distribution of particle diameter is at 5-25 μ

m and in which a second peak is at 55-195 μ

m, wherein a ratio between an area of a volume distribution at particle diameters of 1-35 μ

m and an area of a volume distribution at particle diameters of 45-205 μ

m is 1;

9 to 4;

6;

surface layers on both principal surfaces of the composite part, each of the surface layers containing 80 vol % or more metal including aluminum and having a film thickness of 0.03-0.2 mm; and

(1) a crystalline Ni layer and (2) an Au layer on at least one of the surface layers, the crystalline Ni layer having a film thickness of 0.5-6.5 μ

m, the Au layer having a film thickness of 0.05 μ

m or larger.

2. The heat dissipation component for a semiconductor element according to claim 1, wherein the Ni layer and the Au layer are plating films that are formed by plate processing, and wherein peel strengths of the plating films are 50 N/cm or higher.

3. The heat dissipation component for a semiconductor element according to claim 1, wherein a semiconductor element to be mounted is a semiconductor laser element or a high-frequency element comprising GaN, GaAs, or SiC.

4. The heat dissipation component for a semiconductor element according to claim 1, wherein the composite part is an aluminum-diamond composite body produced by a squeeze casting method, the aluminum-diamond composite body having a thermal conductivity of 400 W/mK or higher at a temperature of 25°

C., a linear thermal expansion coefficient of 5.0×

10<sup>−

6</sup>-10.0×

10<sup>−

6</sup>/K at a temperature of 25-150°

C., and a surface roughness (Ra) of both principal surfaces of 1 μ

m or less.

5. The heat dissipation component for a semiconductor element according to claim 1, wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β

-silicon carbide layer chemically bonded to a surface of the particle.

6. The heat dissipation component for a semiconductor element according to claim 2, wherein a semiconductor element to be mounted is a semiconductor laser element or a high-frequency element comprising GaN, GaAs, or SiC.

7. The heat dissipation component for a semiconductor element according to claim 2, wherein the composite part is an aluminum-diamond composite body produced by a squeeze casting method, the aluminum-diamond composite body having a thermal conductivity of 400 W/mK or higher at a temperature of 25°

C., a linear thermal expansion coefficient of 5.0×

10<sup>−

6</sup>-10.0×

10<sup>−

6</sup>/K at a temperature of 25-150°

C., and a surface roughness (Ra) of both principal surfaces of 1 μ

m or less.

8. The heat dissipation component for a semiconductor element according to claim 3, wherein the composite part is an aluminum-diamond composite body produced by a squeeze casting method, the aluminum-diamond composite body having a thermal conductivity of 400 W/mK or higher at a temperature of 25°

C., a linear thermal expansion coefficient of 5.0×

10<sup>−

6</sup>-10.0×

10<sup>−

6</sup>/K at a temperature of 25-150°

C., and a surface roughness (Ra) of both principal surfaces of 1 μ

m or less.

9. The heat dissipation component for a semiconductor element according to claim 6, wherein the composite part is an aluminum-diamond composite body produced by a squeeze casting method, the aluminum-diamond composite body having a thermal conductivity of 400 W/mK or higher at a temperature of 25°

C., a linear thermal expansion coefficient of 5.0×

10<sup>−

6</sup>-10.0×

10<sup>−

6</sup>/K at a temperature of 25-150°

C., and a surface roughness (Ra) of both principal surfaces of 1 μ

m or less.

10. The heat dissipation component for a semiconductor element according to claim 2, wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β

-silicon carbide layer chemically bonded to a surface of the particle.

11. The heat dissipation component for a semiconductor element according to claim 3, wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β

-silicon carbide layer chemically bonded to a surface of the particle.

12. The heat dissipation component for a semiconductor element according to claim 6, wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β

-silicon carbide layer chemically bonded to a surface of the particle.

13. The heat dissipation component for a semiconductor element according to claim 4, wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β

-silicon carbide layer chemically bonded to a surface of the particle.

14. The heat dissipation component for a semiconductor element according to claim 7, wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β

-silicon carbide layer chemically bonded to a surface of the particle.

15. The heat dissipation component for a semiconductor element according to claim 8, wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β

-silicon carbide layer chemically bonded to a surface of the particle.

16. The heat dissipation component for a semiconductor element according to claim 9, wherein the composite part is an aluminum-diamond composite body in which a particle of the diamond powder is characterized by existence of a β

-silicon carbide layer chemically bonded to a surface of the particle.