OXIDATION RESISTANT BARRIER METAL PROCESS FOR SEMICONDUCTOR DEVICES
First Claim
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1. An integrated circuit, comprising:
- an underlying metal geometry;
a dielectric layer on the underlying metal geometry;
a contact opening through the dielectric layer wherein the contact opening stops on the underlying metal geometry;
an overlying metal geometry wherein a portion of the overlying metal geometry fills a portion of the contact opening; and
an oxidation resistant barrier layer wherein the oxidation resistant barrier layer is disposed between the underlying metal geometry and overlying metal geometry and wherein the oxidation resistant barrier layer is formed of tantalum-nitride (TaN) or titanium-nitride (TiN) with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm.
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Abstract
An integrated circuit and method comprising an underlying metal geometry, a dielectric layer on the underlying metal geometry, a contact opening through the dielectric layer, an overlying metal geometry wherein a portion of the overlying metal geometry fills a portion of the contact opening, and an oxidation resistant barrier layer disposed between the underlying metal geometry and overlying metal geometry. The oxidation resistant barrier layer is formed of TaN or TiN with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm.
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Citations
20 Claims
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1. An integrated circuit, comprising:
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an underlying metal geometry; a dielectric layer on the underlying metal geometry; a contact opening through the dielectric layer wherein the contact opening stops on the underlying metal geometry; an overlying metal geometry wherein a portion of the overlying metal geometry fills a portion of the contact opening; and an oxidation resistant barrier layer wherein the oxidation resistant barrier layer is disposed between the underlying metal geometry and overlying metal geometry and wherein the oxidation resistant barrier layer is formed of tantalum-nitride (TaN) or titanium-nitride (TiN) with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. An integrated circuit, comprising:
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a first metal geometry; a dielectric layer on the first metal geometry; a contact opening through the dielectric layer over the first metal geometry; a second metal geometry wherein a portion of the second metal geometry fills a portion of the contact opening; and an oxidation resistant barrier layer wherein the oxidation resistant barrier layer is disposed between the first metal geometry and the second metal geometry and wherein the oxidation resistant barrier layer is formed of tantalum-nitride (TaN) or titanium-nitride (TiN) with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. An integrated circuit, comprising:
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a first metal geometry; a dielectric layer on the first metal geometry; a contact opening through the dielectric layer over the first metal geometry; a second metal geometry wherein a portion of the second metal geometry fills a portion of the contact opening; an oxidation resistant barrier layer wherein the oxidation resistant barrier layer is disposed between the first metal geometry and the second metal geometry and wherein the oxidation resistant barrier layer is formed of tantalum-nitride (TaN) or titanium-nitride (TiN) with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm; and an interdiffusion barrier layer disposed between the first metal geometry and the oxidation resistant barrier layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification