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OXIDATION RESISTANT BARRIER METAL PROCESS FOR SEMICONDUCTOR DEVICES

  • US 20170271269A1
  • Filed: 06/07/2017
  • Published: 09/21/2017
  • Est. Priority Date: 12/18/2015
  • Status: Active Grant
First Claim
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1. An integrated circuit, comprising:

  • an underlying metal geometry;

    a dielectric layer on the underlying metal geometry;

    a contact opening through the dielectric layer wherein the contact opening stops on the underlying metal geometry;

    an overlying metal geometry wherein a portion of the overlying metal geometry fills a portion of the contact opening; and

    an oxidation resistant barrier layer wherein the oxidation resistant barrier layer is disposed between the underlying metal geometry and overlying metal geometry and wherein the oxidation resistant barrier layer is formed of tantalum-nitride (TaN) or titanium-nitride (TiN) with a nitrogen content of at least 20 atomic % and a thickness of at least 5 nm.

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