×

Bipolar Semiconductor Device Having Localized Enhancement Regions

  • US 20170271445A1
  • Filed: 03/18/2016
  • Published: 09/21/2017
  • Est. Priority Date: 03/18/2016
  • Status: Abandoned Application
First Claim
Patent Images

1. A bipolar semiconductor device comprising a plurality of unit cells, each of said plurality of unit cells comprising:

  • a drift region having a first conductivity type situated over an anode layer having a second conductivity type opposite said first conductivity type;

    a first control trench extending through an inversion region having said second conductivity type, and further extending into said drift region, said first control trench adjacent to cathode diffusions;

    first and second depletion trenches, each having a depletion electrode;

    said first depletion trench being situated between said second depletion trench and said first control trench;

    an enhancement region having said first conductivity type localized in said drift region between said first and second depletion trenches, so that said enhancement region is not situated adjacent said first control trench or between said first depletion trench and said first control trench.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×